SI7540DP

Si7540DP Vishay Siliconix N- and P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 12 RDS(on) (Ω) 0.017 at VGS = 4.5 V 0.025 at VGS = 2.5 V 0.032 at VGS = - 4.5 V 0.053 at VGS = - 2.5 V ID (A) 11.8 9.8 - 8.9 - 6.9 FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFETs New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile PWM Optimized for High Efficiency 100 % Rg Tested P-Channel - 12 APPLICATIONS PowerPAK SO-8 6.15 mm S1 1 2 5.15 mm G1 S2 Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down - Qg Optimized for 500 kHz Operation Synchronous Buck, Shoot-Thru Resistant D1 S2 3 4 D1 G2 8 7 D1 D2 G2 D2 6 5 G1 Bottom View Ordering Information: Si7540DP-T1-E3 (Lead (Pb)-free) Si7540DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction) a Symbol VDS VGS TA = 25 °C TA = 70 °C ID IDM IS PD TJ, Tstg N-Channel Steady 10 s 12 ±8 11.8 9.5 2.9 3.5 2.2 7.6 6.1 20 P-Channel Steady 10 s - 12 - 8.9 - 7.1 - 5.7 - 4.6 - 1.1 1.4 0.9 Unit V A TA = 25 °C Maximum Power Dissipationa TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) b,c 1.1 - 2.9 1.4 3.5 0.9 2.2 - 55 to 150 260 W °C THERMAL RESIS...