HE8050

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6112 Issued Date : 1992.09.30 Revised Date : 2004.11.29 Page No. : 1/4 HE8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. Features High total power dissipation (PT: 2W, TC=25°C) High collector current (IC: 1.5A) TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...................................................................................................................... 1 W Maximum Voltages and Currents (TA=25°C) VCBO Collector t...