9918H Datasheet: N-CHANNEL ENHANCEMENT-MODE POWER MOSFET





9918H N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Datasheet

Part Number 9918H
Description N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Manufacture Silicon Standard
Total Page 6 Pages
PDF Download Download 9918H Datasheet PDF

Features: SSM9918H,J N-CHANNEL ENHANCEMENT-MODE PO WER MOSFET Low on-resistance Capable of 2.5V gate drive Low drive current Surf ace mount package D BV DSS R DS(ON) I D 20V 14mΩ 45A G S Description Powe r MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device d esign, ultra low on-resistance and cost -effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings S ymbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain -Source Voltage Gate-Source Voltage Con tinuous Drain Current, VGS @ 4.5V Conti nuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 20 ± 12 45 20 140 48 0.38 -55 to 150 -55 to 150 Unit s V V A A A W W/ ℃ ℃ ℃ Total Pow er Dissipation Linear Derating Factor S torage Temperature Range Operating Junc tion Temperature Range Thermal Data Sy mbol Rthj-c Rthj-a Parameter Thermal Re sistance Junction-case Thermal Resistan ce Junction-ambient Max. Max. Value 2.6 110 Unit ℃/W ℃/W Rev.2.01 6/26/2003 .

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Low on-resistance
Capable of 2.5V gate drive
Low drive current
Surface mount package
Description
G
D
S
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
SSM9918H,J
N-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
BV DSS
R DS(ON)
ID
20V
14mΩ
45A
G DS
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=125
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
D
S
TO-251(J)
Rating
20
± 12
45
20
140
48
0.38
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
2.6
110
Unit
/W
/W
Rev.2.01 6/26/2003
www.SiliconStandard.com
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