9918H Datasheet | N-CHANNEL ENHANCEMENT MODE POWER MOSFET





(PDF) 9918H pdf File Download

Part Number 9918H
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacture Advanced Power Electronics
Total Page 6 Pages
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Features: AP9918H/J Advanced Power Electronics Co rp. ▼ Low on-resistance ▼ Capable o f 2.5V gate drive ▼ Low drive current ▼ Surface mount package N-CHANNEL E NHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 20V 14mΩ 45A G S Descrip tion The Advanced Power MOSFETs from AP EC provide the designer with the best c ombination of fast switching, ruggedize d device design, ultra low on-resistanc e and cost-effectiveness. G D S TO-252 (H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@ TC=125℃ IDM PD@TC=25℃ TSTG TJ Param eter Drain-Source Voltage Gate-Source V oltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4. 5V Pulsed Drain Current 1 Rating 20 ± 12 45 20 140 48 0.38 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Deratin g Factor Storage Temperature Range Oper ating Junction Temperature Range Therm al Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value .

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Advanced Power
Electronics Corp.
AP9918H/J
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low on-resistance
Capable of 2.5V gate drive
Low drive current
Surface mount package
Description
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
20V
14mΩ
45A
G DS
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=125
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
D
S
TO-251(J)
Rating
20
± 12
45
20
140
48
0.38
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
2.6
110
Unit
/W
/W
Data and specifications subject to change without notice
200227032
Free Datasheet http://www.datasheetlist.com/

                 






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