F11NM60N

STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh™ Power MOSFET General features Type STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.45Ω <0.45Ω <0.45Ω <0.45Ω ID 3 3 2 1 2 1 10A 10A 10A (1) 10A TO-220 IPAK 3 1. Limited only by maximum temperature allowed ■ ■ ■ 1 3 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel DPAK 1 2 TO-220FP Description This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Internal schematic diagram Applications ■ Switching application Order codes Part number STD11NM60N-1 STD11NM60N STP11NM60N STF11NM60N Marking D11NM60N D11NM60N P11NM60N F11NM60N Package IPAK DPAK TO-220 TO-220FP Packaging Tube Tape & reel Tube Tube November 2006 Rev 2 1/17 www.st.com 17 Free Datasheet http://www.datasheetlist.com/ Contents STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical char...