RU75N08

RU75N08 N-Channel Advanced Power MOSFET MOSFET Features 75V/80A, RDS (ON) =8mΩ VGS=10V IDS=40A Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175°C Operating Temperature Lead Free and Green Available Pin Description TO-220 TO-220F TO-263 TO-247 Applications Switching Application Systems N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 75 ±25 175 -55 to 175 TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 80 ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A A A W °C/W J Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID PD RθJC Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case 360 80 76 280 140 0.55 1.2 Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed Copyright© Ruichips Semiconductor Co., Ltd Rev. C – MAR., 2009 www.ruichips.com Free Datasheet http://www.datasheetlist.com/ RU75N08 Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ② (TA=25°C Unless Otherwise Noted) RU75N08 Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=-250µA VDS= 75V...