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NPN Transistor. C5100 Datasheet

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NPN Transistor. C5100 Datasheet






C5100 Transistor. Datasheet pdf. Equivalent




C5100 Transistor. Datasheet pdf. Equivalent





Part

C5100

Description

Silicon NPN Transistor



Feature


2SC5100 Silicon NPN Triple Diffused Plan ar Transistor (Complement to type 2SA19 08) sAbsolute maximum ratings (Ta=25°C ) Symbol VCBO VCEO VEBO IC IB PC Tj Tst g 2SC5100 160 120 6 8 3 75(Tc=25°C) 15 0 –55 to +150 Unit V V V A A W °C ° C Application : Audio and General Purp ose (Ta=25°C) 2SC5100 10max 10max 120m in 50min∗ 0.5max 20typ 200typ V MHz 1 6.2 sElectrical Characteri.
Manufacture

Sanken electric

Datasheet
Download C5100 Datasheet


Sanken electric C5100

C5100; stics Symbol ICBO IEBO V(BR)CEO hFE VCE( sat) fT COB ∗hFE Rank Conditions VCB= 160V VEB=6V IC=50mA VCE=4V, IC=3A IC=3A , IB=0.3A VCE=12V, IE=–0.5A VCB=10V, f=1MHz External Dimensions FM100(TO3PF ) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0. 2 5.5 ø3.3±0.2 1.6 Unit µA 23.0±0 .3 V 9.5±0.2 µA a b pF 1.75 2.1 5 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45 ±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8.


Sanken electric C5100

O(50 to 100), P(70 to 140), Y(90 to 18 0) sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL (Ω) 10 IC (A) 4 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.4 IB2 (A) –0.4 ton (µs) 0.13t yp tstg (µs) 3.50typ tf (µs) 0.32typ 3.35 B C E Weight : Approx 6.5g a. Type No. b. Lot No. I C – V CE Char acteristics (Typical) 350m V CE ( sat ) – I B Characteristics (Typi.


Sanken electric C5100

cal) Collector-Emitter Saturation Voltag e V C E (s at) (V ) 3 I C – V BE Tem perature Characteristics (Typical) 8 (V C E =4V) A 8 0m 20 15 0m A A 1 A 00m 75 m A Collector Current I C (A) 2 50m A Collector Current I C (A ) 6 6 4 4 mp) mp) Cas ˚C ( 2 2 (Cas I B =10mA I C =8A 0 2A 0.6 4A 0.8 1.0 0 0 0 0 1 2 3 4 0 0.2 0.4 0.5 –30˚C 25˚.

Part

C5100

Description

Silicon NPN Transistor



Feature


2SC5100 Silicon NPN Triple Diffused Plan ar Transistor (Complement to type 2SA19 08) sAbsolute maximum ratings (Ta=25°C ) Symbol VCBO VCEO VEBO IC IB PC Tj Tst g 2SC5100 160 120 6 8 3 75(Tc=25°C) 15 0 –55 to +150 Unit V V V A A W °C ° C Application : Audio and General Purp ose (Ta=25°C) 2SC5100 10max 10max 120m in 50min∗ 0.5max 20typ 200typ V MHz 1 6.2 sElectrical Characteri.
Manufacture

Sanken electric

Datasheet
Download C5100 Datasheet




 C5100
2SC5100
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
2SC5100
Unit
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
160
120
6
8
3
75(Tc=25°C)
150
–55 to +150
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
2SC5100
ICBO
VCB=160V
10max
IEBO
VEB=6V
10max
V(BR)CEO
IC=50mA
120min
hFE
VCE=4V, IC=3A
50min
VCE(sat)
IC=3A, IB=0.3A
0.5max
fT
VCE=12V, IE=–0.5A
20typ
COB
VCB=10V, f=1MHz
200typ
hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
Unit
µA
µA
V
V
MHz
pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
(V) ()
IC
VBB1
VBB2
IB1
(A) (V) (V) (A)
40 10 4 10 –5 0.4
IB2 ton tstg tf
(A) (µs) (µs) (µs)
–0.4 0.13typ 3.50typ 0.32typ
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2
3.45 ±0.2
ø3.3±0.2
a
b
5.45±0.1
1.75
2.15
1.05
+0.2
-0.1
5.45±0.1
0.65
+0.2
-0.1
0.8
3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Type No.
B C E b. Lot No.
I C– V CE Characteristics (Typical)
8
150mA
100mA
75mA
6
50mA
4
20mA
2
IB=10mA
0
0 12 34
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
8
2
1
IC=8A
4A
2A
0
0 0.2 0.4 0.6 0.8 1.0
Base Current IB(A)
6
4
2
0
0 0.5 1.0 1.5
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
200
(VCE=4V)
Typ
100
50
h FE– I C Temperature Characteristics (Typical)
200
125˚C
(VCE=4V)
100 25˚C
–30˚C
50
θ j-a– t Characteristics
4
1
0.5
20
0.02
0.1 0.5 1
Collector Current IC(A)
58
20
0.02
0.1 0.5 1
Collector Current IC(A)
58
0.2
1
10 100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=12V)
40
30
Typ
20
10
0
–0.02
126
–0.1
–1
Emitter Current IE(A)
–8
Safe Operating Area (Single Pulse)
20
10
5 DC
Pc–Ta Derating
80
60
1
0.5
Without Heatsink
Natural Cooling
0.1
5 10
50 100 150
Collector-Emitter Voltage VCE(V)
40
20
Without Heatsink
3.5
0
0 25 50
75 100 125
Ambient Temperature Ta(˚C)
150
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