26NM60N

STL26NM60N N-channel 600 V, 0.160 Ω , 19 A PowerFLAT™ 8x8 HV ultra low gate charge MDmesh™ II Power MOSFET Features Order code STL26NM60N VDSS @ TJmax 650 V RDS(on) max < 0.185 Ω ID 19 A (1) ' $ 3 3 3 "OTTOMVIEW 1. The value is rated according to Rthj-case ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 0OWER&,!4˜X(6 Applications ■ Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. $ ' 3 !-V Table 1. Device summary Marking 26NM60N Package PowerFLAT™ 8x8 HV Packaging Tape and reel Order code STL26NM60N November 2011 Doc ID 18472 Rev 2 1/14 www.st.com 14 Free Datasheet http://www.datasheetlist.com/ Contents STL26NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuits ............