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1N6657R

Microsemi

(1N6657R - 1N6659R) DUAL ULTRAFAST POWER RECTIFIER

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: ht...


Microsemi

1N6657R

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com DUAL ULTRAFAST POWER RECTIFIER Qualified per MIL-PRF-19500/616 DEVICES LEVELS 1N6657 1N6658 1N6659 1N6657R 1N6658R 1N6659R JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode) Parameters / Test Conditions Peak Repetitive Reverse Voltage 1N6657, R 1N6658, R 1N6659, R TC = +100°C Symbol VRWM IF IFSM Rθjc Value 100 150 200 15 150 2.3 Unit Vdc Adc A(pk) °C/W TO-254 Average Forward Current (1) Peak Surge Forward Current Thermal Resistance - Junction to Case Note: (1) Derate @ 300mA/°C above TC = 100°C (2) Pulse Test; 300µS, duty cycle ≤ 2% ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Breakdown Voltage (2) IR = 500µAdc Forward Voltage (2) IF = 10Adc IF = 20Adc Reverse Leakage Current (2) VR = 100V VR = 150V VR = 200V Reverse Leakage Current VR = 100V, TC = +100°C VR = 150V, TC = +100°C VR = 200V, TC = +100°C Reverse Recovery Time IF = 1.0A, IR = 1A, IRR = 100mA Junction Capacitance VR = 10Vdc, f = 1.0MHz, VSIG = 50mV(p-p) max 1N6657, R 1N6658, R 1N6659, R VBR VF1 VF2 1N6657, R 1N6658, R 1N6659, R 1N6657, R 1N6658, R 1N6659, R 100 150 200 1.0 1.2 Vdc 1N6657, 1N6658, 1N6659 Symbol Min. Max. Unit 1 2 3 Vdc IR1 10 µAdc 1 2 3 1N6657R, 1N6658R, 1N6659R IR2 1.0 mAdc trr CJ 35 150 nS pF T4-LDS-0068 Rev. 1 (082207) P...




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