NTGD3147F

NTGD3147F Power MOSFET and Schottky Diode Features −20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 Fast Switching Low Gate Change Low RDS(on) Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device http://onsemi.com P−CHANNEL MOSFET V(BR)DSS −20 V RDS(on) Max 145 mW @ −4.5 V 200 mW @ −2.5 V ID Max −2.2 A −1.6 A SCHOTTKY DIODE VR Max 20 V VF Max 0.45 V IF Max 1.0 A Applications DC−DC Converters Portable Devices like PDA’s, Cellular Phones, and Hard Drives MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State t≤5 s Steady State t≤5 s tp = 10 ms IDM TJ, TSTG IS TL TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD Symbol VDSS VGS ID Value −20 ±12 −2.2 −1.6 −2.5 1.0 1.3 −7.5 −25 to 150 −0.8 260 A °C A °C W Unit V V A G D A S K P−Channel MOSFET Schottky Diode Pulsed Drain Current Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) MARKING DIAGRAM 1 TSOP−6 CASE 318G STYLE 15 TC MG G SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Symbol VRRM VR IF Symbol RqJA RqJA RqJA Value 20 20 1 Unit V V A 1 TC = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in e...