2SA1694
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467) sAbsolute maximum ratings (Ta=25°C)
Symbol ...
2SA1694
Silicon
PNP Epitaxial Planar
Transistor (Complement to type 2SC4467) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1694 –120 –120 –6 –8 –3 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SA1694 –10max –10max –120min 50min∗ –1.5max 20typ 300typ V MHz pF
20.0min 4.0max 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 1.4
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–120V VEB=–6V IC=–50mA VCE=–4V, IC=–3A IC=–3A, IB=–0.3A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
Unit
µA µA
19.9±0.3
V
4.0
a b
ø3.2±0.1
2
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) –40 RL (Ω) 10 IC (A) –4 VBB1 (V) –10 VBB2 (V) 5 IB1 (A) –0.4 IB2 (A) 0.4 ton (µs) 0.14typ tstg (µs) 1.40typ tf (µs) 0.21typ
Weight : Approx 6.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
–8
50
V CE ( s a t ) – I B Characteristics (Typical)
–3 Collector-Emitter Saturation Voltage V C E (s at) (V )
I C – V BE Temperature Characteristics (Typical)
–8 (V CE =–4V)
–3
–2
0
0m
m
A
–1 5
A 0m
–100 mA
A
Collector Current I C (A)
–6
–7 5m A
Collector Current I C (A)
–6
–2
–50mA
–4
–4
mp) e Te
mp) e Te (Cas
–25mA
Cas
–1 I C =–8A –4A –2A 0 0 –0.1 –0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0 Base Current I B (A)
0
0
–...