Trench MOSFET. FDMC8884 Datasheet

FDMC8884 Datasheet PDF, Equivalent


Part Number

FDMC8884

Description

N-Channel Power Trench MOSFET

Manufacture

Fairchild

Total Page 7 Pages
PDF Download
Download FDMC8884 Datasheet PDF


FDMC8884 Datasheet
FDMC8884
N-Channel Power Trench® MOSFET
30 V, 15 A, 19 mΩ
April 2012
Features
General Description
„ Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9.0 A
„ Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7.2 A
„ High performance technology for extremely low rDS(on)
„ Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
„ High side in DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
15
24
9.0
40
24
18
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
6.6
53
°C/W
Device Marking
FDMC8884
Device
FDMC8884
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3
1
www.fairchildsemi.com
Free Datasheet http://www.datasheetlist.com/

FDMC8884 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
30
V
ID = 250 μA, referenced to 25 °C
22 mV/°C
VDS = 24 V, VGS = 0 V
TJ = 125 °C
VGS = ±20 V, VDS = 0 V
1
250
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 9.0 A
VGS = 4.5 V, ID = 7.2 A
VGS = 10 V, ID = 9.0 A, TJ = 125 °C
VDD = 5 V, ID = 9.0 A
1.4
1.9
-6
16
22
22
24
2.5 V
mV/°C
19
30 mΩ
30
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
513 685 pF
110 150 pF
76 115 pF
1.4 2.1 Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Qgs Total Gate Charge
Qgd Gate to Drain “Miller” Charge
VDD = 15 V, ID = 9.0 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V
ID = 9.0 A
6 12 ns
2 10 ns
15 27 ns
2 10 ns
10 14 nC
5.0 7.0 nC
1.8 nC
2.2 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 9.0 A
VGS = 0 V, IS = 1.6 A
(Note 2)
(Note 2)
0.86 1.2
0.76 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 9.0 A, di/dt = 100 A/μs
13 18 ns
3 10 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. EAS of 24 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 4 A .
©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3
2
www.fairchildsemi.com
Free Datasheet http://www.datasheetlist.com/


Features Datasheet pdf FDMC8884 N-Channel Power Trench® MOSFET April 2012 FDMC8884 N-Channel Power Trench® MOSFET 30 V, 15 A, 19 mΩ Feat ures „ Max rDS(on) = 19 mΩ at VGS = 1 0 V, ID = 9.0 A „ Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7.2 A „ High per formance technology for extremely low r DS(on) „ Termination is Lead-free and RoHS Compliant General Description Thi s N-Channel MOSFET is produced using Fa irchild Semiconductor’s advanced Powe r Trench® process that has been especi ally tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Comput ers and Portable Battery Packs. Applic ation „ High side in DC - DC Buck Conv erters „ Notebook battery power manage ment „ Load switch in Notebook Top Pi n 1 S S S G Bottom D D D D D 5 6 7 8 4 3 2 1 G S S S D D D MLP 3.3x3. 3 MOSFET Maximum Ratings TA = 25 °C u nless otherwise noted Symbol VDS VGS Pa rameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuou.
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