65N02R

NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK Features http://onsemi.com V(BR)DSS 24 V RDS(on) TYP 8.4 mW @ 10 V ID MAX 65 A Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Pb−Free Packages are Available* D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current − Continuous @ TC = 25°C, Chip Continuous @ TC =25°C, Limited by Package Single Pulse (tp = 10 ms) Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, IL = 11 Apk, L = 1 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds Symbol VDSS VGS RqJC PD ID ID IDM RqJA PD ID RqJA PD ID TJ and Tstg EAS Value 25 ±20 2.0 62.5 65 58 160 67 1.86 10 120 1.04 7.6 −55 to 150 60 Unit Vdc Vdc °C/W W A A A °C/W W A 1 °C/W W A °C mJ 2 1 3 2 3 G S MARKING DIAGRAMS 4 TO−220AB CASE 221A STYLE 5 P65N02RG AYWW 4 D2PAK CASE 418AA STYLE 2 65N02RG AYWW TL 260 °C 65N02R = Specific Device...