BU102S

R www.jdsemi.cn ◆Si NPN ◆RoHS COMPLIANT BU102S Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. 1．APPLICATION Fluorescent Lamp、Charger and Switch-mode power supplies 2．FEATURES High voltage capability Features of good high temperature High switching speed 3．PACKAGE TO-92T 4．Electrical Characteristics 4.1 Absolute Maximum Ratings Tamb= 25℃ unless specified 1 Base(B) 2 Collector(C) 3 Emitter(E) PARAMETER Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Ta=25℃ Power Dissipation Tc=25℃ Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot Tj Tstg VALUE 700 400 9 1.0 0.8 11 150 -55～150 UNIT V V V A W ℃ ℃ 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage Collector-Base Cutoff Current Collector-Emittor Cutoff Current Emittor-Base Cutoff Current DC Current Gain Collector-Emittor Saturation Voltage Base-Emittor Saturation Voltage Rising Time Falling Time Storage Time Typical Frequency ＊: Pulse test tp≤300μs,δ≤2% SYMBOL BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE* VCE sat* VBE sat* tr tf ts fT TEST CONDITION IC=1mA,IE=0 IC=1mA ,IB=0 IE=1mA,IC=0 VCB=700V, IE=0 VCE=400V, IB=0 VEB=9V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=100mA IC=500mA, IB=250mA IC=500mA, IB=250mA IC=100mA (UI9600) MIN 700 400 9 VALUE TYP MAX UNIT V V V μA μA μA 10 20 10 8 15 30 0.6 1.2 0.7 0.9 3.5 V V μs MHz 2.0 VCE=10V,IC=0.1A, f=1MHz 5 Add： 1-4F,3rd Build...