Power MOSFET
IRFPS37N50A, SiHFPS37N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Max.) (Ω) Qg (Max.) (nC) Qgs (...
Description
IRFPS37N50A, SiHFPS37N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Max.) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 180 46 71 Single
D
FEATURES
500 0.13
Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Available
RoHS*
COMPLIANT
Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss Specified Lead (Pb)-free Available
SUPER-247TM
APPLICATIONS
G S D G S N-Channel MOSFET
Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
Full Bridge Converters Power Factor Correction Boost
ORDERING INFORMATION
Package Lead (Pb)-free SnPb SUPER-247TM IRFPS37N50APbF SiHFPS37N50A-E3 IRFPS37N50A SiHFPS37N50A
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.94 mH, RG = 25 Ω, IAS = 36 A (see fig. 12). c. ISD ≤ 36 A, dI/dt ≤ 145 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing...
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