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IRFPS37N50APBF Dataheets PDF



Part Number IRFPS37N50APBF
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRFPS37N50APBF DatasheetIRFPS37N50APBF Datasheet (PDF)

IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 180 46 71 Single D FEATURES 500 0.13 • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available SUPER-247TM APPLICATIONS G S D G S N-.

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IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 180 46 71 Single D FEATURES 500 0.13 • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available SUPER-247TM APPLICATIONS G S D G S N-Channel MOSFET • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES • Full Bridge Converters • Power Factor Correction Boost ORDERING INFORMATION Package Lead (Pb)-free SnPb SUPER-247TM IRFPS37N50APbF SiHFPS37N50A-E3 IRFPS37N50A SiHFPS37N50A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.94 mH, RG = 25 Ω, IAS = 36 A (see fig. 12). c. ISD ≤ 36 A, dI/dt ≤ 145 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply TC = 25 °C EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 500 ± 30 36 23 144 3.6 1260 36 44 446 3.5 - 55 to + 150 300d W/°C mJ A mJ W V/ns °C A UNIT V 1 Downloaded from Elcodis.com electronic components distributor Free Datasheet http://www.datasheetlist.com/ IRFPS37N50A, SiHFPS37N50A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.28 °C/W UNIT SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Coss Coss eff. Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ± 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 150 °C VGS = 10 V ID = 22 Ab Ab VDS = 50 V, ID = 22 500 2.0 20 - 4.0 ± 100 25 250 0.13 - V V nA µA Ω S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VDS = 1.0 V , f = 1.0 MHz VGS = 0 V VDS = 400 V , f = 1.0 MHz VDS = 0 V to 400 V VGS = 10 V ID = 36 A, VDS = 400 V, see fig. 6 and 13b - 5579 810 36 7905 221 400 23 98 52 80 180 46 71 ns nC pF VDD = 250 V, ID = 36 A, RG = 2.15 Ω, RD = 7.0 Ω, see fig. 10b - - 570 8.6 36 A 144 1.5 860 13 V ns µC G S TJ = 25 °C, IS = 36 A, VGS = 0 Vb TJ = 25 °C, IF = 36 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. 2 Downloaded from Elcodis.com electronic components distributor Free Datasheet http://www.datasheetlist.com/ .


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