SIHFPS37N50A

IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 180 46 71 Single D FEATURES 500 0.13 Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss Specified Lead (Pb)-free Available SUPER-247TM APPLICATIONS G S D G S N-Channel MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching TYPICAL SMPS TOPOLOGIES Full Bridge Converters Power Factor Correction Boost ORDERING INFORMATION Package Lead (Pb)-free SnPb SUPER-247TM IRFPS37N50APbF SiHFPS37N50A-E3 IRFPS37N50A SiHFPS37N50A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.94 mH, RG = 25 Ω, IAS = 36 A (see fig. 12). c. ISD ≤ 36 A, dI/dt ≤ 145 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing...