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TSM20N50CN Dataheets PDF



Part Number TSM20N50CN
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description 500V N-Channel Power MOSFET
Datasheet TSM20N50CN DatasheetTSM20N50CN Datasheet (PDF)

TSM20N50CN 500V N-Channel Power MOSFET TO-3PN Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 500 RDS(on)(mΩ) 0.3 @ VGS =10V ID (A) 20 General Description The TSM20N50CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well .

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TSM20N50CN 500V N-Channel Power MOSFET TO-3PN Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 500 RDS(on)(mΩ) 0.3 @ VGS =10V ID (A) 20 General Description The TSM20N50CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. Features ● ● ● Low RDS(ON) 0.3Ω (Max.) Low gate charge typical @ 54nC (Typ.) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM20N50CN C0 Package TO-3PN Packing 30pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25℃) Pulsed Drain Current * Peak Diode Recovery dv/dt (Note 3) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Repetitive Avalanche Energy (Note 1) Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature Symbol VDS VGS ID IDM dv/dt EAS IAR EAR TJ TSTG Limit 500 ±30 20 80 4.5 1088 20 31.2 150 -55 to +150 Unit V V A A V/ns mJ A mJ ºC o C 1/8 Version: A12 Free Datasheet http://www.datasheetlist.com/ TSM20N50CN 500V N-Channel Power MOSFET Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol RӨJC RӨJA Limit 0.4 62.5 Unit o o C/W C/W Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Diode Forward Voltage Dynamic b Conditions VGS = 0V, ID = 250uA VGS = 10V, ID = 10A VDS = VGS, ID = 250uA VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V VDS = 30V, ID = 10A IS = 20A, VGS = 0V Symbol BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) Min 500 -2.0 ----------------- Typ -0.25 ---11 -54 15 12.5 3094 296 9.2 78 72 184 68 426 6 Max -0.3 4.0 1 ±100 -1.5 ------------- Unit V Ω V uA nA S V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = 400V, ID = 20A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time VGS = 0V, IS = 20A, VDD = 250V, ID = 20A, RG = 25Ω tr td(off) tf tfr nS nS uC dIF/dt = 100A/us Reverse Recovery Charge Qfr Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. VDD = 50V, IAS=20A, L=4.9mH, RG=25Ω, Starting TJ=25℃ 3. ISD ≤20A, di/dt ≤ 200A/uS, Vdd ≤ BVDS, Starting TJ=25℃ 4. Pulse test: pulse width ≤300uS, duty cycle ≤2% 5. b For design reference only, not subject to production testing. 6. c Switching time is essentially independent of operating temperature. 2/8 Version: A12 Free Datasheet http://www.datasheetlist.com/ TSM20N50CN 500V N-Channel Power MOSFET Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/8 Version: A12 Free Datasheet http://www.datasheetlist.com/ TSM20N50CN 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Drain Current vs. Case Temperature BVDSS vs. Junction Temperature Maximum Safe Operating Area Capacitance vs. Drain-Source Voltage Normalized Thermal Transient Impedance, Junction-to-Ambient 4/8 Version: A12 Free Datasheet http://www.datasheetlist.com/ TSM20N50CN 500V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 5/8 Version: A12 Free Datasheet http://www.datasheetlist.com/ TSM20N50CN 500V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 6/8 Version: A12 Free Datasheet http://www.datasheetlist.com/ TSM20N50CN 500V N-Channel Power MOSFET TO-3PN Mechanical Drawing Unit: Millimeters 7/8 Version: A12 Free Datasheet http://www.datasheetlist.com/ TSM20N50CN 500V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims .


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