Document
TSM20N50CN
500V N-Channel Power MOSFET
TO-3PN
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
500
RDS(on)(mΩ)
0.3 @ VGS =10V
ID (A)
20
General Description
The TSM20N50CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.
Features
● ● ● Low RDS(ON) 0.3Ω (Max.) Low gate charge typical @ 54nC (Typ.) Improve dv/dt capability
Block Diagram
Ordering Information
Part No.
TSM20N50CN C0
Package
TO-3PN
Packing
30pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25℃) Pulsed Drain Current * Peak Diode Recovery dv/dt (Note 3) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Repetitive Avalanche Energy (Note 1) Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature
Symbol
VDS VGS ID IDM dv/dt EAS IAR EAR TJ TSTG
Limit
500 ±30 20 80 4.5 1088 20 31.2 150 -55 to +150
Unit
V V A A V/ns mJ A mJ ºC
o
C
1/8
Version: A12
Free Datasheet http://www.datasheetlist.com/
TSM20N50CN
500V N-Channel Power MOSFET
Thermal Performance
Parameter
Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RӨJC RӨJA
Limit
0.4 62.5
Unit
o o
C/W C/W
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Diode Forward Voltage Dynamic
b
Conditions
VGS = 0V, ID = 250uA VGS = 10V, ID = 10A VDS = VGS, ID = 250uA VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V VDS = 30V, ID = 10A IS = 20A, VGS = 0V
Symbol
BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on)
Min
500 -2.0 -----------------
Typ
-0.25 ---11 -54 15 12.5 3094 296 9.2 78 72 184 68 426 6
Max
-0.3 4.0 1 ±100 -1.5 -------------
Unit
V Ω V uA nA S V
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
c
VDS = 400V, ID = 20A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time VGS = 0V, IS = 20A, VDD = 250V, ID = 20A, RG = 25Ω
tr td(off) tf tfr
nS
nS uC
dIF/dt = 100A/us Reverse Recovery Charge Qfr Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. VDD = 50V, IAS=20A, L=4.9mH, RG=25Ω, Starting TJ=25℃ 3. ISD ≤20A, di/dt ≤ 200A/uS, Vdd ≤ BVDS, Starting TJ=25℃ 4. Pulse test: pulse width ≤300uS, duty cycle ≤2% 5. b For design reference only, not subject to production testing. 6. c Switching time is essentially independent of operating temperature.
2/8
Version: A12
Free Datasheet http://www.datasheetlist.com/
TSM20N50CN
500V N-Channel Power MOSFET
Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted)
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/8
Version: A12
Free Datasheet http://www.datasheetlist.com/
TSM20N50CN
500V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Drain Current vs. Case Temperature BVDSS vs. Junction Temperature
Maximum Safe Operating Area
Capacitance vs. Drain-Source Voltage
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/8
Version: A12
Free Datasheet http://www.datasheetlist.com/
TSM20N50CN
500V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
5/8
Version: A12
Free Datasheet http://www.datasheetlist.com/
TSM20N50CN
500V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
6/8
Version: A12
Free Datasheet http://www.datasheetlist.com/
TSM20N50CN
500V N-Channel Power MOSFET
TO-3PN Mechanical Drawing
Unit: Millimeters
7/8
Version: A12
Free Datasheet http://www.datasheetlist.com/
TSM20N50CN
500V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims .