HM6N70

HM6N70/F General Description： HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220, TO-220Fwhich accords with the RoHS standard. VDSS ID PD(TC=25℃ ) RDS(ON)Typ 700 6 85 1.8 V A W Ω Features： l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:18.6nC) TO-220) G D S TO-220 G D S l Low Reverse transfer capacitances(Typical:6.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（ Tc= 25℃ unless otherwise specified） ： Symbol VDSS ID IDM VGS EAS EAR IAR a1 a2 a1 Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Rating 700 6 3.6 24 ±30 180 26 2.3 5.0 85 0.68 150， –55 to 150 300 Units V A A A V mJ mJ A V/ns W W/℃ ℃ ℃ a1 a3 dv/dt PD Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25 °C Operating Junction and Storage Temperature Range MaximumTemperature for Soldering TJ， Tstg TL Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com 1 Free Datasheet http://www.datasheetlist.com/ HM6N70/F Electric...