AT49F8192AT

Features Single-voltage Operation – 5V Read – 5V Programming Fast Read Access Time – 70 ns Internal Erase/Program Control Sector Architecture – One 8K Word (16K Bytes) Boot Block with Programming Lockout – Two 4K Word (8K Bytes) Parameter Blocks – One 496K Word (992K Bytes) Main Memory Array Block Fast Sector Erase Time – 10 seconds Byte-by-byte or Word-by-word Programming – 10 µs Typical Hardware Data Protection Data Polling for End of Program Detection Low Power Dissipation – 50 mA Active Current – 100 µA CMOS Standby Current Typical 10,000 Write Cycles 8-megabit (1M x 8/ 512K x 16) Flash Memory AT49F008A AT49F008AT AT49F8192A AT49F8192AT Description The AT49F008A(T) and AT49F8192A(T) are 5-volt, 8-megabit Flash memories organized as 1,048,576 words of 8 bits each or 512K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 90 ns with power dissipation of just 275 mW. When deselected, the CMOS standby current is less than 100 µA. The device contains a user-enabled “boot block” protection feature. Two versions of the feature are available: the AT49F008A/8192A locates the boot block at lowest order addresses (“bottom boot”); the AT49F008AT/8192AT locates it at highest order addresses (“top boot”). To allow for simple in-system reprogrammability, the AT49F008A(T)/8192A(T) does not require high-input voltages for programming. Reading data out of the device is similar to reading from an EP...