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K9F2808U0C

Samsung

FLASH MEMORY

K9F2808U0C FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 In...


Samsung

K9F2808U0C

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K9F2808U0C FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm 1.A3 Pin assignment of TBGA Package is changed.(Page 4) (before) NC --> (after) Vss 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 32) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 33) The min. Vcc value 1.8V devices is changed. K9F28XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V 2.2 Pb-free Package is added. K9F2808U0C-FCB0,FIB0 K9F2808Q0C-HCB0,HIB0 K9F2816U0C-HCB0,HIB0 K9F2816U0C-PCB0,PIB0 K9F2816Q0C-HCB0,HIB0 K9F2808U0C-HCB0,HIB0 K9F2808U0C-PCB0,PIB0 2.3 Some AC parameters are changed(K9F28XXQ0C). tWC tWH tWP tRC tREH tRP tREA tCEA Before After 2.4 45 60 15 20 25 40 50 60 15 20 25 40 30 40 45 55 Draft Date Apr. 15th 2002 Sep. 5th 2002 Remark Advance Advance 2.0 Dec.10th 2002 Preliminary 2.1 Mar. 6th 2003 Mar. 13rd 2003 Mar. 26th 2003 1. New definition of the number of invalid blocks is added. (Minimum 502 valid blocks are guaranteed for each contiguous 64Mb memory space) 2. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.) May. 24th 2003 2.5 2.6 1. K9F2808U(Q)0C-DC(I)B0,K9F2816U(Q)0C-DC(I)B0 is deleted. 2. tWC is changed. 45ns(Before) ---> 50ns(After) 3. Minimum valid block number is changed. 1004(Before) --> 1009(After) 1. Minimum valid block num...




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