CAS100H12AM1

CAS100H12AM1 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features Package VDS 1.2 kV RDS(on) (TJ = 25˚C) EOFF (TJ = 125˚C) 16 mΩ 1.8 mJ Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) AlSiC Baseplate, AMB Si3N4 Substrate System Benefits Enables Compact and Lightweight Systems High Efficiency Operation Ease of Transistor Gate Control Reduced Cooling Requirements Reduced System Cost Applications High Power Converters Motor Drives Solar Inverters UPS and SMPS Induction Heating Part Number CAS100H12AM1 Package Half-Bridge Module Marking CAS100H12AM1 Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol VDS VGS ID ID(pulse) Parameter Drain - Source Voltage Gate - Source Voltage Continuous Drain Current Pulsed Drain Current Junction Temperature Case and Storage Temperature Range Case Isolation Voltage Stray Inductance Mounting Torque Weight Clearance Distance Creepage Distance Pd Power Dissipation Value 1.2 -5/+20 168 117 400 150 -55 to +125 6 20 2.94 150 12.2 17.3 20.2 568 Unit kV V A A ˚C ˚C kV nH Nm g mm mm mm W Measured without fasteners Terminal to terminal Terminal to terminal Terminal to base plate Fig 24 AC, t=1min Measured from D1 to S2 VGS = 20V, TC=25˚C VGS = 20V, TC=90˚C Pulse width Limited by Tjmax,TC = 25˚C Fig. 25 T...