Schottky Diode. C3D02060A Datasheet

C3D02060A Diode. Datasheet pdf. Equivalent

C3D02060A Datasheet
Recommendation C3D02060A Datasheet
Part C3D02060A
Description Silicon Carbide Schottky Diode
Feature C3D02060A; C3D02060A Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec™ Rectifier Features Package IF (.
Manufacture Cree
Datasheet
Download C3D02060A Datasheet




Cree C3D02060A
C3D02060A
Silicon Carbide Schottky Diode
Z-RecRectifier
Features
600-Volt Schottky Rectifier
Optimized for PFC Boost Diode Application
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies
Power Factor Correction
- Typical PFC Pout : 300W-450W
Package
TO-220-2
PIN 1
PIN 2
Part Number
C3D02060A
VRRM =
600 V
IF (TC=135˚C) = 4 A
Qc =
4.8 nC
CASE
Package
TO-220-2
Marking
C3D02060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol Parameter
Value Unit
Test Conditions
Note
VRRM
VRSM
VDC
IF
IFRM
IFSM
IFSM
Ptot
TJ , Tstg
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
600
600
600
8
4
2
12
9
21
19
65
39.5
17
-55 to
+175
1
8.8
V
V
V
A TTTCCC===211536˚52C˚˚CC
A TTCC==2151˚0C˚C, ,tPt=P=1100mmSS, ,HHalaflfSSinieneWWavaeveDD==00.3.3
A TTCC==2151˚0C˚C, ,tPt=P=1100mmSS, ,HHalaflfSSinieneWWavaeveDD==00.3.3
A TC=25˚C, tP=10 µS, Pulse
W TTCC==2151˚0C˚C
˚C
Nm
lbf-in
M3 Screw
6-32 Screw
1 C3D02060A Rev. D
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Cree C3D02060A
Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
1.5 1.7
1.8 2.4
V
IIFF
=
=
2
2
AA TTJJ==2157°5C°C
IR Reverse Current
10 50
20 100
μA
VVRR
=
=
600
600
V
V
TTJJ==2157°5C°C
QC Total Capacitive Charge
4.8
nC
VdiR/d=t
600 V,
= 500
IAF/=μS2A
TJ = 25°C
C Total Capacitance
120
12
11
pF
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC TO-220 Package Thermal Resistance from Junction to Case
Typ.
3.8
Unit
°C/W
Note
Typical Performance
4.40.0 1.01E-005
3.35.5
3.30.0
TTTTJJJJ
=
=
=
=
25°C
75°C
125°C
175°C
2.25.5
2.20.0
1.15.5
1.10.0
0.05.5
8.0E-086
6.0E-066
Current 25C
Current 75C
Current 125C4.0E-046
Current 175C
2.0E-026
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°
Current 25C
Current 75C
Current 125C
Current 175C
00.0
00..00
00..55 11..00 11..55 22..00 22..55 33..00
VF
Forward Voltage
Forward Voltage
(V)
Figure 1. Forward Characteristics
0.0E+000
0 100 200 300 400 500 600 700 800
0 100 200 300 400 500 600 700 800
VR Reverse Voltage (V)
Reverse Bias (V)
Figure 2. Reverse Characteristics
2 C3D02060A Rev. D
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Cree C3D02060A
Typical Performance
C3D02060A Current Derating
2200
1188
1166 20% Duty*
30% Duty*
1144 50% Duty*
70% Duty*
1122 DC
1100
88
66
44
22
00 2255
5500 7755 110000 112255 115500 117755
TC
CaseTCTCeamse Tpeemrpaertauturree(C)°C)
* Frequency > 1KHz
Figure 3. Current Derating
D3_2A_FP
6600
5500
4400
3300 D3_2A_FP
2200
1100
00
11
1100 101000
VR VRReRveevresreseVVoollttaaggee(V()V)
10010000
Figure 4. Capacitance vs. Reverse Voltage
1.0E+01
1.0E+00
1.0E-01
TBD
1.0E-02
1.0E-03
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
Tim e (s)
1.E-02
1.E-01
1.E+00
Figure 5. Transient Thermal Impedance
3 C3D02060A Rev. D
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