Schottky Diode. C3D02060F Datasheet

C3D02060F Diode. Datasheet pdf. Equivalent

C3D02060F Datasheet
Recommendation C3D02060F Datasheet
Part C3D02060F
Description Silicon Carbide Schottky Diode
Feature C3D02060F; C3D02060F Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec™ Rectifier (Full-Pak) Features Pa.
Manufacture Cree
Datasheet
Download C3D02060F Datasheet




Cree C3D02060F
C3D02060F
Silicon Carbide Schottky Diode
Z-RecRectifier (Full-Pak)
Features
600-Volt Schottky Rectifier
Optimized for PFC Boost Diode Application
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature
Fully Isolated Case
Coefficient
on
VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
No Additional Isolation Required
Applications
Switch Mode Power Supplies
Power Factor Correction
- Typical
Motor Drives
PFC
Pout
:
150W-300W
Package
VRRM =
600 V
IF (TC=128˚C) = 2 A
Qc =
4.8 nC
TO-220-F2
PIN 1
PIN 2
CASE
Part Number
C3D02060F
Package
TO-220-F2
Marking
C3D02060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VRRM
VRSM
VDC
IF
IFRM
IFSM
IFSM
Ptot
TJ , Tstg
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
600
600
600
4
2
1.8
12
8
20
16
65
10.8
4.7
-55 to
+175
1
8.8
V
V
V
A TTTCCC===211523˚85C˚˚CC
A TTCC==2151˚0C˚C, ,tPt=P =1100mms,s,HHalaflfSSinieneWWavaev,e,DD==00.3.3
A TTCC==2151˚0C˚C, ,tPt=p =1010mms,SH, aHlfalSfiSneineWaWvaev,eD, =D0=.03.3
A TC=25˚C, tP = 10 µs, Pulse
W TTCC==2151˚0C˚C
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Note
1 C3D02060F Rev. D
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Cree C3D02060F
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
1.5 1.7
1.8 2.4
V
10
20
50
100
μA
QC Total Capacitive Charge
4.8
nC
C Total Capacitance
120
12 pF
11
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
IIFF
=
=
2
2
AA TTJJ==2157°5C°C
VVRR
=
=
600
600
V
V
TTJJ==2157°5C°C
VdiR/d=t
600 V,
= 500
IAF/=μs2A
TJ = 25°C
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Thermal Characteristics
Note
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
13.8
Unit
°C/W
Typical Performance
4.04.0
3.53.5
3.03.0
TTTTJJJJ
=
=
=
=
25°C
75°C
125°C
175°C
2.52.5
2.02.0
1.51.5
1.01.0
0.50.5
00.0
00..00
0.0.55 11..00 11..55
22..00
VF ForwVFaFrodrwVarodlVtoalgtaege((VV))
22..55
66
55
44
D1_25C
D1_75C
D1_125C
D1_175C
33
22
11
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°C
Current(A)
D2_75C
D2_125C
D2_175C
00
33..00 00 101000 202000 303000 404000 505000 606000 707000 880000 990000
VR VRReRveeverrssee VVooltaltgaeg(Ve) (V)
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
2 C3D02060F Rev. D
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Cree C3D02060F
Typical Performance
1100
99
88
77
66
55
44
33
22
11
00
2255
C3D02060F Current Derating
20% Duty*
30% Duty*
50% Duty*
70% Duty*
DC
5500 7755 110000 112255 115500
TTCC
CCaassee TTeemmppeerraattuurree
* Frequency > 1KHz
((°°CC) )
117755
Figure 3. Current Derating
D3_2A_FP
6600
5500
4400
3300 D3_2A_FP
2200
1100
00
11
1100 110000
VR ReVvReRresveerVseolVtoaltgaege((VV)
10100000
Figure 4. Capacitance vs. Reverse Voltage
1E1
1E0
E-1
E-2
1E-5
1E-4
1E-3
1E-2
1E-1
Time (s)
1E0
Figure 5. Transient Thermal Impedance
1E1
1E2
1E3
3 C3D02060F Rev. D
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