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Schottky Diode. C3D04060A Datasheet |
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C3D04060A
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
Package
VRRM
= 600 V
IF (TC=135˚C) = 6 A
Qc = 10 nC
• 600-Volt Schottky Rectifier
• Optimized for PFC Boost Diode Application
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on VF
Benefits
TO-220-2
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies (SMPS)
• Boost diodes in PFC or DC/DC stages
• Free Wheeling Diodes in Inverter stages
• AC/DC converters
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
PIN 1
PIN 2
Part Number
C3D04060A
Unit
CASE
Package
TO-220-2
Test Conditions
Marking
C3D04060
Note
VRRM
Repetitive Peak Reverse Voltage
600
V
VRSM
Surge Peak Reverse Voltage
600
V
VDC
DC Blocking Voltage
IF
Continuous Forward Current
IFRM
IFSM
IF,Max
Ptot
dV/dt
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Diode dV/dt ruggedness
∫i2dt
i2t value (Per Leg)
TJ , Tstg
Operating Junction and Storage Temperature
TO-220 Mounting Torque
600
13.5
6
4
17
12
30.5
20
220
160
52
22.5
200
4.7
2
-55 to
+175
1
8.8
V
TC=25˚C
A TC=135˚C
TC=155˚C
A
TC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP = 10 ms, Half Sine Wave
A
TC=25˚C, tp = 10 ms, Half Sine Wave
TC=110˚C, tp = 10 ms, Half Sine Wave
A
TC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse
W
TC=25˚C
TC=110˚C
V/ns VR=0-600V
A2s
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Fig. 3
Fig. 8
Fig. 8
Fig. 4
1
C3D04060A Rev. G, 08-2016
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Electrical Characteristics
Symbol
Parameter
VF
Forward Voltage
IR
Reverse Current
Typ.
Max.
Unit
1.4
1.7
1.7
2.4
V
5
10
25
100
μA
QC
Total Capacitive Charge
10
nC
C
Total Capacitance
231
18.5
pF
15
EC
Capacitance Stored Energy
1.4
μJ
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Test Conditions
IF = 4 A TJ=25°C
IF = 4 A TJ=175°C
VR = 600 V TJ=25°C
VR = 600 V TJ=175°C
VR = 400 V, IF = 4 A
di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 400 V
Symbol Parameter
RθJC
Thermal Resistance from Junction to Case
Typ.
2.9
Unit
°C/W
Note
Fig. 9
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance
12
TJ = -55 °C
10
TJ = 25 °C
8 TJ = 75 °C
TJ = 125 °C
6
TJ = 175 °C
4
2
0
0 2000.0 4000.5 6010.0 8010.5 1020.00 1220.50 3.0 3.5 4.0
FowardVVFo(ltVag)e, VF (V)
Figure 1. Forward Characteristics
2
C3D04060A Rev. G, 08-2016
100
80
60
TJ = 175 °C
TJ = 125 °C
40
TJ = 75 °C
TJ = 25 °C
20
TJ = -55 °C
0
0 200 400 600 800 1000 1200
ReverseVVRol(taVge), VR (V)
Figure 2. Reverse Characteristics
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Typical Performance
50
45
10% Duty
20% Duty
40
30% Duty
50% Duty
35
70% Duty
DC
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TTCC (˚°CC)
Figure 3. Current Derating
16
Conditions:
14 TJ = 25 °C
12
10
8
6
4
2
0
0 100 200 300 400 500 600 700
ReverseVVRol(taVge), VR (V)
Figure 5. Total Capacitance Charge vs. Reverse Voltage
60
50
40
30
20
10
0
25
250
200
50 75 100 125 150 175
TTCC(°˚CC)
Figure 4. Power Derating
Conditions:
TJ = 25 °C
Ftest = 1 MHz
Vtest = 25 mV
150
100
50
0
0
1
10
100
1000
ReverseVVRolt(aVge), VR (V)
Figure 6. Capacitance vs. Reverse Voltage
3
C3D04060A Rev. G, 08-2016
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