Schottky Diode. C3D04060A Datasheet

C3D04060A Diode. Datasheet pdf. Equivalent

C3D04060A Datasheet
Recommendation C3D04060A Datasheet
Part C3D04060A
Description Silicon Carbide Schottky Diode
Feature C3D04060A; C3D04060A Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package VRRM = 600 V IF (TC=1.
Manufacture Cree
Datasheet
Download C3D04060A Datasheet




Cree C3D04060A
C3D04060A
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
Package
VRRM
= 600 V
IF (TC=135˚C) = 6 A
Qc =   10 nC
600-Volt Schottky Rectifier
Optimized for PFC Boost Diode Application
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
TO-220-2
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
PIN 1
PIN 2
Part Number
C3D04060A
Unit
CASE
Package
TO-220-2
Test Conditions
Marking
C3D04060
Note
VRRM
Repetitive Peak Reverse Voltage
600
V
VRSM
Surge Peak Reverse Voltage
600
V
VDC
DC Blocking Voltage
IF
Continuous Forward Current
IFRM
IFSM
IF,Max
Ptot
dV/dt
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Diode dV/dt ruggedness
∫i2dt
i2t value (Per Leg)
TJ , Tstg
Operating Junction and Storage Temperature
TO-220 Mounting Torque
600
13.5
6
4
17
12
30.5
20
220
160
52
22.5
200
4.7
2
-55 to
+175
1
8.8
V
TC=25˚C
A TC=135˚C
TC=155˚C
A
TC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP = 10 ms, Half Sine Wave
A
TC=25˚C, tp = 10 ms, Half Sine Wave
TC=110˚C, tp = 10 ms, Half Sine Wave
A
TC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse
W
TC=25˚C
TC=110˚C
V/ns VR=0-600V
A2s
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Fig. 3
Fig. 8
Fig. 8
Fig. 4
1
C3D04060A Rev. G, 08-2016



Cree C3D04060A
Electrical Characteristics
Symbol
Parameter
VF
Forward Voltage
IR
Reverse Current
Typ.
Max.
Unit
1.4
1.7
1.7
2.4
V
5
10
25
100
μA
QC
Total Capacitive Charge
10
nC
C
Total Capacitance
231
18.5
pF
15
EC
Capacitance Stored Energy
1.4
μJ
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Test Conditions
IF = 4 A TJ=25°C
IF = 4 A TJ=175°C
VR = 600 V TJ=25°C
VR = 600 V TJ=175°C
VR = 400 V, IF = 4 A
di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 400 V
Symbol Parameter
RθJC
Thermal Resistance from Junction to Case
Typ.
2.9
Unit
°C/W
Note
Fig. 9
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance
12
TJ = -55 °C
10
TJ = 25 °C
8 TJ = 75 °C
TJ = 125 °C
6
TJ = 175 °C
4
2
0
0 2000.0 4000.5 6010.0 8010.5 1020.00 1220.50 3.0 3.5 4.0
FowardVVFo(ltVag)e, VF (V)
Figure 1. Forward Characteristics
2
C3D04060A Rev. G, 08-2016
100
80
60
TJ = 175 °C
TJ = 125 °C
40
TJ = 75 °C
TJ = 25 °C
20
TJ = -55 °C
0
0 200 400 600 800 1000 1200
ReverseVVRol(taVge), VR (V)
Figure 2. Reverse Characteristics



Cree C3D04060A
Typical Performance
50
45
10% Duty
20% Duty
40
30% Duty
50% Duty
35
70% Duty
DC
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TTCC (˚°CC)
Figure 3. Current Derating
16
Conditions:
14 TJ = 25 °C
12
10
8
6
4
2
0
0 100 200 300 400 500 600 700
ReverseVVRol(taVge), VR (V)
Figure 5. Total Capacitance Charge vs. Reverse Voltage
60
50
40
30
20
10
0
25
250
200
50 75 100 125 150 175
TTCC˚CC)
Figure 4. Power Derating
Conditions:
TJ = 25 °C
Ftest = 1 MHz
Vtest = 25 mV
150
100
50
0
0
1
10
100
1000
ReverseVVRolt(aVge), VR (V)
Figure 6. Capacitance vs. Reverse Voltage
3
C3D04060A Rev. G, 08-2016







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