Schottky Diode. C3D08060A Datasheet

C3D08060A Diode. Datasheet pdf. Equivalent

C3D08060A Datasheet
Recommendation C3D08060A Datasheet
Part C3D08060A
Description Silicon Carbide Schottky Diode
Feature C3D08060A; C3D08060A Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 600-Volt Schottky Rectifier • Z.
Manufacture Cree
Datasheet
Download C3D08060A Datasheet




Cree C3D08060A
C3D08060A
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
600-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Package
VRRM
= 600 V
IF (TC=135˚C) = 11 A
Qc = 20 nC
TO-220-2
PIN 1
PIN 2
Part Number
C3D08060A
CASE
Package
TO-220-2
Marking
C3D08060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
600
V
VRSM
Surge Peak Reverse Voltage
600
V
VDC
DC Blocking Voltage
IF
Continuous Forward Current
IFRM
Repetitive Peak Forward Surge Current
IFSM
Non-Repetitive Peak Forward Surge Current
IF,Max
Non-Repetitive Peak Forward Surge Current
Ptot
Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TO-220 Mounting Torque
600
V
24
11
8
37.5
25.5
71
60
650
530
107
46.5
-55 to
+175
1
8.8
TC=25˚C
A TC=135˚C
TC=152˚C
A
TC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP = 10 ms, Half Sine Wave
A
TC=25˚C, tp = 10 ms, Half Sine Wave
TC=110˚C, tp = 10 ms, Half Sine Wave
A
TC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse
W
TC=25˚C
TC=110˚C
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Note
Fig. 3
Fig. 8
Fig. 8
Fig. 4
1
C3D08060A Rev. F, 10-2015



Cree C3D08060A
Electrical Characteristics
Symbol
Parameter
VF
Forward Voltage
IR
Reverse Current
Typ.
Max.
Unit
1.5
1.8
2.1
2.4
V
8.5
17
42.5
170
μA
QC
Total Capacitive Charge
20
nC
C
Total Capacitance
395
37
pF
32
EC
Capacitance Stored Energy
3.0
μJ
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Test Conditions
IF = 8 A TJ=25°C
IF = 8 A TJ=175°C
VR = 600 V TJ=25°C
VR = 600 V TJ=175°C
VR = 400 V, IF = 8A
di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 400 V
Thermal Characteristics
Symbol Parameter
RθJC
Thermal Resistance from Junction to Case
Typ.
1.4
Unit
°C/W
Note
Fig. 9
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance
20
18 TJ = -55 °C
16 TJ = 25 °C
14 TJ = 75 °C
12
TJ = 125 °C
10
TJ = 175 °C
8
6
4
2
0
0 2000. 0 4000.5 6010.0 8010. 5 1020.00 1220.50 3.0 3.5 4.0
FowardVVFol(taVg)e, VF (V)
Figure 1. Forward Characteristics
30
25
20
TJ = 175 °C
15
TJ = 125 °C
TJ = 75 °C
10
TJ = 25 °C
TJ = -55 °C
5
0
0 100 200 300 400 500 600 700 800 900 1000
ReverseVVRol(taVge), VR (V)
Figure 2. Reverse Characteristics
2
C3D08060A Rev. F, 10-2015



Cree C3D08060A
Typical Performance
80
120
10% Duty
70
20% Duty
30% Duty
100
60
50% Duty
70% Duty
50
DC
80
40
60
30
40
20
20
10
0
25 50 75 100 125 150 175
TTCC (˚°CC)
Figure 3. Current Derating
30
Conditions:
TJ = 25 °C
25
20
15
10
5
0
0 100 200 300 400 500 600 700
ReverseVVRol(taVge), VR (V)
0
25
450
400
350
300
250
200
150
100
50
0
0
50 75 100 125 150 175
TTCC˚CC)
Figure 4. Power Derating
Conditions:
TJ = 25 °C
Ftest = 1 MHz
Vtest = 25 mV
1
10
100
1000
ReverseVVRol(taVg)e, VR (V)
Figure 5. Total Capacitance Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
3
C3D08060A Rev. F, 10-2015







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