Schottky Diode. C3D10060A Datasheet

C3D10060A Diode. Datasheet pdf. Equivalent

C3D10060A Datasheet
Recommendation C3D10060A Datasheet
Part C3D10060A
Description Silicon Carbide Schottky Diode
Feature C3D10060A; C3D10060A Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec™ Rectifier Features Package IF.
Manufacture Cree
Datasheet
Download C3D10060A Datasheet




Cree C3D10060A
C3D10060A
Silicon Carbide Schottky Diode
Z-RecRectifier
Features
600-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies
Power Factor Correction
- Typical
Motor Drives
PFC
Pout
:
1000W-2000W
- Typical Power : 3HP-5HP
Package
VRRM = 600 V
IF (TC=135˚C) = 14 A
Qc = 25 nC
TO-220-2
PIN 1
PIN 2
CASE
Part Number
C3D10060A
Package
TO-220-2
Marking
C3D10060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
VRRM
VRSM
VDC
IF
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
IFRM Repetitive Peak Forward Surge Current
IFSM
IFSM
Ptot
TJ , Tstg
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
600
600
600
29.5
14
10
67
44
90
71
250
136.3
59
-55 to
+175
1
8.8
V
V
V
A TTTCCC===211535˚52C˚˚CC
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinieneWWavaev,e,DD==00.3.3
A TTCC==2151˚0C˚C, ,tPt=P=1100msm, sH, aHlfaSlfinSeinWe aWvaev,eD, =D0=.03.3
A TC=25˚C, tP=10 µs, Pulse
W TTCC==2151˚0C˚C
˚C
Nm M3 Screw
lbf-in 6-32 Screw
1 C3D10060A Rev. C
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Cree C3D10060A
Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
1.5
2.0
1.8
2.4
V
IIFF
=
=
10
10
A
A
TTJJ==2157°5C°C
IR Reverse Current
10
20
50
200
μA
VVRR
=
=
600
600
V
V
TTJJ==2157°5C°C
QC Total Capacitive Charge
25
nC
VdiR/d=t
600 V,
= 500
IAF/=μs10
A
TJ = 25°C
C Total Capacitance
480
50
42
pF
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f =
= 25˚C, f
= 25˚C, f
1 MHz
= 1 MHz
= 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
1.1
Unit
°C/W
Typical Performance
Note
20
18
16
14
TTTTJJJJ
=
=
=
=
25°C
75°C
125°C
175°C
12
10
8
6
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VF Forward Voltage (V)
Figure 1. Forward Characteristics
110000
90
90
80
80
70
6700
TJ = 25°C
5600 TJ = 75°C
4500 TJ = 125°C
30
TTJJ
=
=
175°C
25°C
40 TJ = 75°C
20 TJ = 125°C
30
10
TJ = 175°C
0200 100 200 300 400 500 600 700 800 900
10 VR Reverse Voltage (V)
0
0 Fi1g0u0re 22. 0R0ever3s0e0 Cha40ra0cter5is0t0ics 600
VR Reverse Voltage (V)
700
2 C3D10060A Rev. C
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Cree C3D10060A
Typical Performance
70
60
50
40
30
20
10
0
25
20% Duty*
30% Duty*
50% Duty*
70% Duty*
DC
50 75 100 125
TC Case Temperature (°C)
*Frequency > 1KHz
Figure 3. Current Derating
150
175
400
350
300
250
200
150
100
50
0
1
10 100
VR Reverse Voltage (V)
1000
Figure 4. Capacitance vs. Reverse Voltage
1E11.0E+01
1.0E+00
1E0
1.0E-01
1E-1
1.0E-02
1.0E-03
1E-2 1E-15. E - 0 7 11E.E-4-0 6 1 . E -10E5-3 1 . E - 0 4 1E-2 1 . E - 0 3 1E-1 1 . E - 0 2 11.EE0- 0 1 1 .E +10E01
Tim e (s)
Figure 5. Transient Thermal Impedance
3 C3D10060A Rev. C
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