Schottky Diode. C5D50065D Datasheet

C5D50065D Diode. Datasheet pdf. Equivalent

C5D50065D Datasheet
Recommendation C5D50065D Datasheet
Part C5D50065D
Description Silicon Carbide Schottky Diode
Feature C5D50065D; C5D50065D Silicon Carbide Schottky Diode VRRM = Qc = 650 V Z-Rec® Rectifier Featu.
Manufacture Cree
Datasheet
Download C5D50065D Datasheet




Cree C5D50065D
C5D50065D
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
650-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
Package
TO-247-3
VRRM =
IF (TC=130˚C)  =
Qc =
650 V
 50 A
110 nC
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Solar Inverters
Motor Drives
EV Chargers
UPS
Automotive
Part Number
C5D50065D
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Package
TO-247-3
Test Conditions
Marking
C5D50065
Note
VRRM
VRSM
VDC
IF
IFRM
IFSM
IF,Max
Ptot
∫i2dt
TJ , Tstg
Repetitive Peak Reverse Voltage
650 V
Surge Peak Reverse Voltage
650 V
DC Peak Blocking Voltage
650 V
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Forward Surge Current
Non-Repetitive Peak Forward Current
Power Dissipation
i2t value (Per Leg)
Operating Junction and Storage
Temperature
TO-247 Mounting Torque
100
50
46
153
106
400
330
2000
1600
300
130
800
545
-55 to
+175
1
8.8
TC=25˚C
A TC=130˚C
TC=135˚C
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
W
TC=25˚C
TC=110˚C
A2s
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Fig. 3
Fig. 8
Fig. 8
Fig. 4
1 C5D50065D Rev. B, 05-2017



Cree C5D50065D
Electrical Characteristics
Symbol
Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5
1.25
1.8
1.3
50
4
200
6
1.8
2.2
500
1000
110
1970
200
180
IF = 50 A TJ=25°C
V IF = 25 A TJ=25°C
IF = 50 A TJ=175°C
IF = 25 A TJ=175°C
VR = 650 V , TJ=25°C
μA VR = 400 V , TJ=25°C
VR = 650 V , TJ=175°C
VR = 400 V , TJ=175°C
VR = 400 V, IF = 50 A
nC di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy 16.5
μJ VR = 400 V
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
0.5
Unit
°C/W
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance
100
75
TJ = 175 °C
50 TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
25
TJ = -55 °C
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VF ForwFaowrdardVVoollttaaggee, V(FV(V))
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
TJ = 175 °C
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
TJ = -55 °C
100 200 300 400 500 600 700
VR RevReevresrsee VVooltlatgaeg, VeR ((VV) )
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
2 C5D50065D Rev. B, 05-2017



Cree C5D50065D
Typical Performance
35500
30000 10% Duty
2300%%
Duty
Duty
25500
50% Duty
70% Duty
DC
20000
15500
10000
5500
00
2255 5500 7755 110000 112255 115500 117755
TC (°C)
Figure 3. Current Derating
32255
30000
27755
25500
22255
20000
17755
15500
12255
10000
7755
5500
2255
00
2255 5500 7755 110000 112255 115500 117755
TcTCCas(e°TeCm)perature (°C)
Figure 4. Power Derating
112200
CCoonnddiittiioonnss::
110000
TTJJ== 2255°°CC
8800
6600
4400
2200
00
00 5500 110000 115500 220000 225500 330000 335500 440000
ReverseVVRolt(agVe,)VR (V)
Figure 5. Recovery Charge vs. Reverse Voltage
22000000
11880000
11660000
11440000
11220000
Conditions:
Figure 6. Power DeratinTCJog=n2d5i°tCions:
FVTFVttteJtee=essststtt==2==51212°5M5CMmmHHVzVz
11000000
880000
660000
440000
220000
00
00..11 11 1100 110000   10100000
ReversVeRVo(ltaVge), VR (V)
Figure 6. Typical Capacitance vs. Reverse Voltage
3 C5D50065D Rev. B, 05-2017







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