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C4D05120E

Cree

Silicon Carbide Schottky Diode

C4D05120E ® Silicon Carbide Schottky Diode VRRM = IF (TC=135˚C) Qc = 1200 V = 9 A 27 nC Z-Rec...


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C4D05120E

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C4D05120E ® Silicon Carbide Schottky Diode VRRM = IF (TC=135˚C) Qc = 1200 V = 9 A 27 nC Z-Rec Rectifier Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF TO-252-2 Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 PIN 2 CASE Applications Solar Inverters Power Factor Correction Part Number C4D05120E Package TO-252-2 Marking C4D05120 Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter VRRM VRSM VDC Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Value 1200 1300 1200 19 9 5 26 18 42 34 Unit V V V TC=25˚C TC=135˚C TC=160˚C Test Conditions Note IF IFRM IFSM Continuous Forward Current Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current A A A TC=25˚C, tP=10 ms, Half Sine pulse TC=110˚C, tP=10 ms, Half Sine pulse TC=25˚C, tP=10 ms, Half Sine pulse TC=110˚C, tP=10 ms, Half Sine pulse IF,Max Ptot TJ Tstg Non-Repetitive Peak Forward Current Power Dissipation Operating Junction Range Storage Temperature Range 400 320 97 42 -55 to +175 -55 to +135 A W ˚C ˚C TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse TC=25˚C TC=110˚C 1 C4D05120E Rev....




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