C4D05120E
®
Silicon Carbide Schottky Diode
VRRM = IF (TC=135˚C) Qc =
1200 V = 9 A 27 nC
Z-Rec...
C4D05120E
®
Silicon Carbide
Schottky Diode
VRRM = IF (TC=135˚C) Qc =
1200 V = 9 A 27 nC
Z-Rec Rectifier
Features Package
1.2kV
Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF TO-252-2
Benefits
Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway
PIN 1 PIN 2
CASE
Applications
Solar Inverters Power Factor Correction
Part Number
C4D05120E
Package
TO-252-2
Marking
C4D05120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol Parameter
VRRM VRSM VDC Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage
Value
1200 1300 1200 19 9 5 26 18 42 34
Unit
V V V TC=25˚C TC=135˚C TC=160˚C
Test Conditions
Note
IF
IFRM IFSM
Continuous Forward Current
Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current
A
A A
TC=25˚C, tP=10 ms, Half Sine pulse TC=110˚C, tP=10 ms, Half Sine pulse TC=25˚C, tP=10 ms, Half Sine pulse TC=110˚C, tP=10 ms, Half Sine pulse
IF,Max
Ptot TJ Tstg
Non-Repetitive Peak Forward Current
Power Dissipation Operating Junction Range Storage Temperature Range
400 320
97 42 -55 to +175 -55 to +135
A
W ˚C ˚C
TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse
TC=25˚C TC=110˚C
1
C4D05120E Rev....