DatasheetsPDF.com

C4D08120E

Cree

Silicon Carbide Schottky Diode

C4D08120E ® Silicon Carbide Schottky Diode VRRM = IF (TC=135˚C) Qc = 1200 V = 12 A 37 nC Z-Rec ...



C4D08120E

Cree


Octopart Stock #: O-785865

Findchips Stock #: 785865-F

Web ViewView C4D08120E Datasheet

File DownloadDownload C4D08120E PDF File







Description
C4D08120E ® Silicon Carbide Schottky Diode VRRM = IF (TC=135˚C) Qc = 1200 V = 12 A 37 nC Z-Rec Rectifier Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF TO-252-2 Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 PIN 2 CASE Applications Part Number C4D08120E Package TO-252-2 Marking C4D08120 Solar Inverters UPS Motor Drives Power Factor Correction Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter VRRM VRSM VDC Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Value 1200 1300 1200 24.5 12 8 38 26 64 50 Unit V V V A TC=25˚C TC=135˚C TC=155˚C Test Conditions Note IF IFRM IFSM Continuous Forward Current Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current A A TC=25˚C, tP=10 ms, Half Sine pulse TC=110˚C, tP=10 ms, Half Sine pulse TC=25˚C, tP=10 ms, Half Sine pulse TC=110˚C, tP=10 ms, Half Sine pulse IF,Max Ptot TJ Tstg Non-Repetitive Peak Forward Current Power Dissipation Operating Junction Range Storage Temperature Range 600 480 137 59 -55 to +175 -55 to +135 A W ˚C ˚C TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)