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C4D20120D

Cree

Silicon Carbide Schottky Diode

C4D20120D Silicon Carbide Schottky Diode VRRM = IF; TC<135˚C 1200 V = 32 A 132 nC Z-Rec™ Rectifier Features Qc...


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C4D20120D

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C4D20120D Silicon Carbide Schottky Diode VRRM = IF; TC<135˚C 1200 V = 32 A 132 nC Z-Rec™ Rectifier Features Qc = 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Part Number C4D20120D Package TO-247-3 Marking C4D20120 Applications Switch Mode Power Supplies Power Factor Correction Motor Drives Maximum Ratings (TC=25°C unless otherwise specified) Symbol VRRM VRSM VDC IF IFRM Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current(Per Leg/Device) Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current Power Dissipation(Per Leg/Device) Maximum Case Temperature Operating Junction Range Storage Temperature Range TO-247 Mounting Torque Value 1200 1300 1200 16/32 47* 31.5* 71* 59.5* 176/352 76/152 135 -55 to +175 -55 to +135 1 8.8 V V V A A A W ˚C ˚C ˚C Nm lbf-in M3 Screw 6-32 Screw Test Conditions Note TC<135˚C, No AC component TC=25˚C, tP=10 ms, Half Sine Pulse TC-110˚C, tP=10 ms, Half Sine Pulse TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse TC=25˚C TC=110˚C .B D20120D Rev Datasheet: C4 IFSM Ptot Tc TJ Tstg * ...




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