C4D20120D
Silicon Carbide Schottky Diode
VRRM = IF;
TC<135˚C
1200 V = 32 A 132 nC
Z-Rec™ Rectifier
Features
Qc...
C4D20120D
Silicon Carbide
Schottky Diode
VRRM = IF;
TC<135˚C
1200 V = 32 A 132 nC
Z-Rec™ Rectifier
Features
Qc =
1.2-KVolt
Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway
Part Number C4D20120D
Package TO-247-3
Marking C4D20120
Applications
Switch Mode Power Supplies Power Factor Correction Motor Drives
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
VRRM VRSM VDC IF IFRM
Parameter
Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current(Per Leg/Device) Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current Power Dissipation(Per Leg/Device) Maximum Case Temperature Operating Junction Range Storage Temperature Range TO-247 Mounting Torque
Value
1200 1300 1200 16/32 47* 31.5* 71* 59.5* 176/352 76/152 135 -55 to +175 -55 to +135 1 8.8 V V V A A A W ˚C ˚C ˚C Nm lbf-in M3 Screw 6-32 Screw
Test Conditions
Note
TC<135˚C, No AC component TC=25˚C, tP=10 ms, Half Sine Pulse TC-110˚C, tP=10 ms, Half Sine Pulse TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse TC=25˚C TC=110˚C
.B D20120D Rev Datasheet: C4
IFSM Ptot Tc TJ Tstg
*
...