CPW3-0600S003–Silicon Carbide Schottky Diode Chip
Z-Rec Rectifier
TM
VRRM = 600 V IF(AVG) = 3 A
Features
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CPW3-0600S003–Silicon Carbide
Schottky Diode Chip
Z-Rec Rectifier
TM
VRRM = 600 V IF(AVG) = 3 A
Features
600-Volt
Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Swtitching Positive Temperature Coefficient on VF
Chip Outline
Qc
= 6.7 nC
Part Number
CPW3-0600S003B
Anode
Al
Cathode
NiV/Ag
Package
Sawn on Foil
Marking
Wafer # on Foil
Maximum Ratings
Symbol
VRRM VRSM VDC IF(AVG) IFRM IFSM TJ , Tstg
Parameter
Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Average Forward Current Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current Operating Junction and Storage Temperature
Value Unit
600 600 600 3 20 100 -55 to +175 V V V A A A ˚C
TJ=175˚C
Test Conditions
Note
Rev. A W3-0600S003 Datasheet: CP
TC=25˚C, tP=10 ms, Half Sine Wave, D=0.3 TC=25˚C, tP=10 µs, Pulse
1 1
Subject to change without notice. www.cree.com/power
1
Free Datasheet http://www.nDatasheet.com
Electrical Characteristics
Symbol
VF IR QC
Parameter
Forward Voltage Reverse Current Total Capacitive Charge
Typ.
1.5 1.8 10 20 6.7 155 13 12
Max.
1.8 2.4 50 100
Unit
V μA nC
Test Conditions
IF = 3 A TJ=25°C IF = 3 A TJ=175°C VR = 600 V TJ=25°C VR = 600 V TJ=175°C VR = 600 V, IF = 3 A di/dt = 500 A/μs TJ = 25°C VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz
Note
C
Total Cap...
