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Ordering number:ENN778F
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1207/2SC2909
High-Voltage...
www.DataSheet.co.kr
Ordering number:ENN778F
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1207/2SC2909
High-Voltage Switching AF 60W Predriver Applications
Features
· Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast switching speed.
Package Dimensions
unit:mm 2003B
[2SA1207/2SC2909]
5.0 4.0 4.0
0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3
5.0
( ) : 2SA1207
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1.3
1.3
1 : Emitter 2 : Collector 3 : Base SANYO : NP
Ratings (–)180 (–)160 (–)5 (–)70 (–)140 600 150 –55 to +150
Unit V V V mA mA mW
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)10mA VCE=(–)10V, IC=(–)10mA VCB=(–)10V, f=1MHz IC=(–)30mA, IB=(–)3mA 100* 150 (2.5)2.0 0.08 (–0.14) 0.3 (–0.4) Conditions Ratings min typ max (–)0.1 (–)0.1 400* MHz pF V Unit µA µA
* : The 2SA1207/2SC2909 are classified by 10mA hFE as follows :
Rank hFE R 100 to 200 S 140 to 280 T 200 to 400
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