Document
STW11NK90Z
N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH™ Power MOSFET
General features
Type STW11NK90Z
■ ■ ■ ■ ■
VDSS 900V
RDS(on) <0.98Ω
ID 9.2A
Pw 200W
100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeability TO-247
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number STW11NK90Z Marking W11NK90Z Package TO-247 Packaging Tube
July 2006
Rev 2
1/12
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Contents
STW11NK90Z
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 5
3 4 5
Test circuits
.............................................. 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STW11NK90Z
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID ID IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20KΩ) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak diode recovery voltage slope Operating junction temperature Storage temperature Value 900 900 ± 30 9.2 5.8 36.8 200 1.51 6000 4.5 -55 to 150 Unit V V V A A A W W/°C V V/ns °C
PTOT
VESD(G-D) dv/dt TJ Tstg
(2)
1. Pulse width limited by safe operating area 2. ISD < 9.2A, di/dt < 200A/µs, VDD =80%V(BR)DSS
Table 2.
Symbol Rthj-case Rthj-a Tl
Thermal resistance
Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Value 0.66 50 300 Unit °C/W °C/W °C
Table 3.
Symbol IAR EAS
Avalanche data
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value 9.2 400 Unit A mJ
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Electrical characteristics
STW11NK90Z
2
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating @125°C VGS = ±20V VDS= VGS, ID = 100µA VGS= 10V, ID= 4.6A 3 3.75 0.82 Min. 900 1 50
±10
Typ.
Max.
Unit V µA µA µA V Ω
4.5 0.98
Table 5.
Symbol gfs (1) Ciss Coss Crss
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS =15V, ID = 4.6A Min. Typ. 11 3000 240 48 83 95 14 49 115 Max. Unit S pF pF pF pF nC nC nC
VDS =25V, f=1 MHz, VGS=0
Coss eq(2). Equivalent output capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge
VGS=0, VDS =0V to 720V VDD=720V, ID = 9.2A VGS =10V (see Figure 14)
1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=450 V, ID= 4.6A, RG=4.7Ω, VGS=10V (see Figure 13) Min. Typ. 30 19 76 50 Max. Unit ns ns ns ns
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STW11NK90Z
Electrical characteristics
Table 7.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=9.2A, VGS=0 ISD=9.2A, di/dt = 100A/µs, VDD=50V, Tj=25°C (see Figure 18) ISD=9.2A, di/dt = 100A/µs, VDD=50V, Tj=150°C (see Figure 18) 584 6 21 Test conditions Min. Typ. Max. 9.2 36.8 1.6 Unit A A V ns µC A
Reverse recovery time Reverse recovery charge Reverse recovery current
790 8.7 22
ns µC A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 8.
Symbol BVGSO(1)
.