STA3250Q

STA3250Q PNP Silicon Transistor Applications Power amplifier application High current switching application PIN Connection Features Low saturation voltage: VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50mA Large collector current capacity: IC=-2A Small and compact SMD type package SOT-223 Ordering Information Type NO. STA3250Q Marking STA3250□ Package Code SOT-223 □ : Year & Week Code Absolute Maximum Ratings Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature range [Ta=25℃] Symbol VCBO VCEO VEBO IC PC PC* TJ Tstg Rating -50 -50 -5 -2 1.1 1.5 150 -55~150 Unit V V V A W W °C °C Characteristic Thermal resistance Junction-ambient Symbol Rth(J-A) Rth(J-A) * Typ. - Max 113.6 83.3 Unit ℃/W * Device mounted on ceramic substrate (250mm2ⅹ0.8t) KSD-T5A001-002 1 Free Datasheet http://www.nDatasheet.com STA3250Q Electrical Characteristics Characteristic Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current [Ta=25℃] Symbol BVCEO ICBO IEBO hFE Test Condition IC=-1mA, IB=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-0.5A* VCE=-2V, IC=-1.5A* IC=-1A, IB=-0.05A* IC=-1A, IB=-0.05A* VCE=-2V, IC=-0.05A VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -50 120 40 215 24 100 300 50 -0.1 -0.1 240 -0.35 -1.2 - Unit V μA μA DC current gain hFE Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector...