STA3250F

STA3250F PNP Silicon Transistor Applications Power amplifier application High current switching application PIN Connection Features Low saturation voltage: VCE(sat)=-0.15V Typ @ IC=-1A, IB=-50mA Large collector current capacity: IC=-2A Small and compact SMD type package Complementary pair with STC4250F SOT-89 Ordering Information Type NO. STA3250F Marking HW1 YWW HW1: DEVICE CODE, YWW(Y : Year code, WW : Weekly code) Package Code SOT-89 Absolute Maximum Ratings Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation [Ta=25℃] Symbol VCBO VCEO VEBO IC PC PC* Rating -50 -50 -5 -2 0.5 1 150 -55~150 Unit V V V A W W °C °C Junction temperature Storage temperature range TJ Tstg Characteristic Thermal resistance Junction-ambient Symbol Rth(J-A) Rth(J-A) * Typ. - Max 250.0 125.0 Unit ℃/W * : When mounted on ceramic substrate(250 ㎟×0.8t) KSD-T5B005-004 1 Free Datasheet http://www.nDatasheet.com STA3250F Electrical Characteristics Characteristic Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current [Ta=25℃] Symbol BVCEO ICBO IEBO hFE Test Condition IC=-1mA, IB=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-0.5A* VCE=-2V, IC=-1.5A* IC=-1A, IB=-0.05A* IC=-1A, IB=-0.05A* VCE=-2V, IC=-0.05A VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -50 120 40 215 24 100 300 50 -0.1 -0.1 240 -0.35 -1.2 - Unit V μA μA DC current gain hFE Collector-emitter saturation voltag...