STA3250D

STA3250D PNP Silicon Transistor Applications Power amplifier application High current switching application PIN Connection Features Low saturation voltage: VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50mA Large collector current capacity: IC=-2A Small and compact SMD type package “Green” device and RoHS compliant device Available in full lead (Pb)-free device TO-252 Ordering Information Type NO. STA3250D Marking STA3250□ Package Code TO-252 □ : Year & Week Code Absolute Maximum Ratings Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage [Ta=25℃] Symbol VCBO VCEO VEBO IC Rating -50 -50 -5 -2 -4 1 10 150 -55~150 Unit V V V A(DC) A(Pulse) W W °C °C Collector current ICP* PC(Ta= 25°C) Collector Power dissipation PC(TC= 25°C) Junction temperature Storage temperature range * : Single pulse, tp= 300 ㎲ TJ Tstg KSD-T6O023-001 1 Free Datasheet http://www.nDatasheet.co STA3250D Electrical Characteristics Characteristic Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current [Ta=25℃] Symbol BVCEO ICBO IEBO hFE Test Condition IC=-1mA, IB=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-0.5A* VCE=-2V, IC=-1.5A* IC=-1A, IB=-0.05A* IC=-1A, IB=-0.05A* VCE=-2V, IC=-0.05A VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -50 120 40 215 24 100 300 50 -0.1 -0.1 240 -0.35 -1.2 - Unit V μA μA DC current gain hFE Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance ...