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KF9N50P Dataheets PDF



Part Number KF9N50P
Manufacturers KEC
Logo KEC
Description N-Channel MOSFET
Datasheet KF9N50P DatasheetKF9N50P Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V, ID= 9A RDS(ON)=0.75 Qg(typ.) =19nC (Max) @VGS =10V KF9N50P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF9N50P DIM MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Sourc.

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V, ID= 9A RDS(ON)=0.75 Qg(typ.) =19nC (Max) @VGS =10V KF9N50P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF9N50P DIM MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 Tj Tstg SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD 125 1.0 150 -55 150 9 5.5 24 200 4 4.5 44.6 0.36 RATING KF9N50P 500 30 9* 5.5* 24* mJ mJ V/ns W W/ A KF9N50F UNIT V V KF9N50F Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 1.0 62.5 2.8 62.5 /W /W * : Drain current limited by maximum junction temperature. PIN CONNECTION 2010. 12. 20 Revision No : 0 1/2 Free Datasheet http://www.nDatasheet.com KF9N50P/F ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=500V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V 500 2.5 0.5 0.64 10 4.5 100 0.75 V V/ A V nA VGS=10V, ID=4.5A Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS


KF9N50F KF9N50P KF9N25F


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