KF9N25F

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies. FEATURES VDSS= 250V, ID= 9.0A Drain-Source ON Resistance : RDS(ON)=0.4 Qg(typ) = 14.5nC D N N A KF9N25P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF9N25P O C F E G B Q I K P M L J H @VGS = 10V MAXIMUM RATING (Ta=25 ) RATING CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 Tj Tstg SYMBOL KF9N25P VDSS VGSS ID IDP EAS EAR dv/dt PD 83 0.67 150 -55 150 9.0 5.65 25 180 4.0 4.5 38 0.3 250 30 9.0* 5.65* 25* A C DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q UNIT KF9N25F V V 1 2 3 1. GATE 2. DRAIN 3. SOURCE TO-220AB A KF9N25F F mJ mJ V/ns W W/ K E O DIM B MILLIMETERS Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient J Maximum Junction Temperature L M R D N N H RthJC RthJA 1.5 62.5 3.3 62.5 /W Q /W 1 2 3 *...