Document
Preliminary Data Sheet
2SK4146
MOS FIELD EFFECT TRANSISTOR
Description
R07DS0130EJ0100 Rev.1.00 Sep 24, 2010
The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance ⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance ⎯ Ciss = 3500 pF TYP. (VDS = 10 V)
Ordering Information
Part No. 1 2SK4146-S19-AY ∗ LEAD PLATING Pure Sn (Tin) PACKING 50 pcs/tube Package TO-220, S19 tube
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Absolute Maximum Ratings (TA = 25°C)
Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current ∗2 2 Repetitive Avalanche Energy ∗ Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 75 ±20 ±80 ±200 84 1.5 150 −55 to +150 33 109 Unit V V A A W W °C °C A mJ
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Starting Tch = 25°C, VDD = 38 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
Thermal Resistance
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.49 83.3 °C/W °C/W
R07DS0130EJ0100 Rev.1.00 Sep 24, 2010
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2SK4146
Chapter Title
Electrical Characteristics (TA = 25°C)
Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance ∗1 Drain to Source On-state 1 Resistance ∗ Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time Reverse Recovery Charge Note: ∗1. Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω
Symbol IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
Min
Typ
2.0 15
3.0 32 7.8 3500 620 160 26 20 85 17 61 16 20 1.0 58 125
Max 10 ±100 4.0 10.1
Unit μA nA V S mΩ pF pF pF ns ns ns ns nC nC nC V ns nC
Test Conditions VDS = 75 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 40 A VGS = 10 V, ID = 40 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 38 V, ID = 40 A, VGS = 10 V, RG = 0 Ω VDD = 60 V, VGS = 10 V, ID = 80 A IF = 80 A, VGS = 0 V IF = 80 A, VGS = 0 V, di/dt = 100 A/μ s
1.5
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0
VDS
VDS
Wave Form
0 td(on) ton
τ τ = 1 μs Duty Cycle ≤ 1%
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50 Ω
RL VDD
R07DS0130EJ0100 Rev.1.00 Sep 24, 2010
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2SK4146
Chapter Title
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
120
dT - Percentage of Rated Power - %
100
PT - Total Power Dissipation - W
100 80 60 40 20 0 0 25 50 75 100 125 150 175
80 60 40 20 0 0 25 50 75 100 125 150 175
TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA
TC - Case Temperature - °C
1000
d it e Lim V ) n) (o 0 i S 1 RD S = G ID(DC) (V
ID(pul s e)
PW =1
i
ID - Drain Current - A
100
00
1i
1i 0 m
i
μs
m
s
i
10
s
w Po D er is
1
TC = 25°C Single Pulse
p si io at n d it e m Li
0.1 0.1 1 10 100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
rth(t) - Transient Thermal Resistance - °C/W
Rth(ch-A) = 83.3 °C/W
10
Rth(ch-C) = 1.49 °C/W 1
0.1 0.001 1m
Single Pulse 0.01 10 m 0.1 m 100 1 1 10 10 100 100 1000 1000
PW - Pulse Width - s
R07DS0130EJ0100 Rev.1.00 Sep 24, 2010
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2SK4146
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
250 200
ID - Drain Current - A ID - Drain Current - A
1000 100 10 1 0.1 0.01 0 TA = -55°C 25°C 75°C 150°C
150 100 50 0 0 1 2 3 4 V GS = 10 V Pulsed 5 6
V DS = 10 V Pulsed 1 2 3 4 5 6
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 V DS = 10 V ID = 1 mA Pulsed -75 -25 25 75 125 175
| yfs | - Forward Transfer Admittance - S
100 TA = -55°C 25°C 75°C 150°C 10
1 0.1 1 10
V DS = 10 V Pulsed 100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
20 16 12 8 4 0 0 1 10
20 16 12
ID = 16 A 40 A 80 A
8 4 0 Pulsed 0 4.