K4146

Preliminary Data Sheet 2SK4146 MOS FIELD EFFECT TRANSISTOR Description R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance ⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A) Low input capacitance ⎯ Ciss = 3500 pF TYP. (VDS = 10 V) Ordering Information Part No. 1 2SK4146-S19-AY ∗ LEAD PLATING Pure Sn (Tin) PACKING 50 pcs/tube Package TO-220, S19 tube Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current ∗2 2 Repetitive Avalanche Energy ∗ Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 75 ±20 ±80 ±200 84 1.5 150 −55 to +150 33 109 Unit V V A A W W °C °C A mJ Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Starting Tch = 25°C, VDD = 38 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.49 83.3 °C/W °C/W R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 Page 1 of 6 Free Datasheet http://www.nDatasheet.com 2SK4146 Chapter Title Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Le...