RU6099R

RU6099R N-Channel Advanced Power MOSFET Features 60V/120A, RDS (ON) =6mΩ (Typ.) @VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175°C Operating Temperature Lead Free and Green Available Pin Description TO-220 Applications Switching Application Systems Inverter Systems N-Channel MOSFET Absolute Maximum Ratings Symbol VDSS VGSS TJ TSTG IS Parameter Rating 60 ±25 175 -55 to 175 TC=25°C TC=25°C TC=25°C TC=100°C PD RθJC ③ ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A A A 120 380 Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current ② ① 120 Maximum Power Dissipation Thermal Resistance-Junction to Case TC=25°C TC=100°C 90 150 75 1 ① W °C/W Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 625 mJ Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2012 www.ruichips.com Free Datasheet http://www.Datasheet4U.com RU6099R Electrical Characteristics Symbol Parameter (TA=25°C Unless Otherwise Noted) RU6099R Min. Typ. Max. Test Condition Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) ④ VGS=0V, IDS=250µA VDS= 60V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS= 10V, IDS=40A 60 1 30 2 3 4 ±100 6 7 V µA V nA mΩ Zero ...