RU6099

RU6099 N-Channel Advanced Power MOSFET MOSFET Features 60V/120A, RDS (ON) =6mΩ (Type) VGS=10V IDS=40A Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175°C Operating Temperature Lead Free and Green Available Pin Description TO-220 TO-220F TO-263 TO-247 Applications Switching Application Systems Inverter Systems N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 60 ±25 175 -55 to 175 TC=25°C TC=25°C TC=25°C TC=100°C PD RθJC Maximum Power Dissipation Thermal Resistance-Junction to Case TC=25°C TC=100°C 120(Max) 380 120 90 ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A A A Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current 200 150 0.8 1000 W °C/W mJ Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed Copyright© Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2009 www.ruichips.com Free Datasheet http://www.Datasheet4U.com RU6099 Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ② (TA=25°C Unless Otherwise Noted) RU6099 Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance ...