DMN26D0UT

DMN26D0UT N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Low On-Resistance: 3.0 Ω @ 4.5V 4.0 Ω @ 2.5V 6.0 Ω @ 1.8V 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Gate Lead, Halogen, and Antimony Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SOT-523 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.002 grams (approximate) NEW PRODUCT Drain D Gate Gate Protection Diode G Source S ESD PROTECTED TOP VIEW EQUIVALENT CIRCUIT TOP VIEW Maximum Ratings Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current @TA = 25°C unless otherwise specified Symbol VDSS VGSS ID IDM Value 20 ±10 230 805 Unit V V mA mA Characteristic TP = 10µs Thermal Characteristics @TA = 25°C unless otherwise specified PD RθJA TJ, TSTG 300 417 -55 to +150 mW °C/W °C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operatin...