KF13N50F

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.44 (Max) @VGS = 10V Qg(typ.) = 35nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KF13N50P KF13N50F Drain-Source Voltage Gate-Source Voltage VDSS VGSS 500 V 30 V @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 13 13* 8 8* 40 40* 860 19.5 4.5 208 49.8 1.66 0.4 A mJ mJ V/ns W W/ Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 150 Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 0.6 62.5 2.51 /W 62.5 /W * : Drain current limited by maximum junction temperature. EQUIVALENT CIRCUIT D Q KF13N50P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF13N50P A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3+0.1/-0.05 0.8+_ 0.1 3.6 +_ 0.2 2.8+_ 0.1 3.7 0.5+0.1/-0.05 1.5 13.08+_ 0.3 1.46 1.4 +_ 0.1 1.27+_ 0.1 2.54 +_ 0.2 4.5 +_ 0.2 2.4 +_ 0.2 9.2 +_...