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P5NK60Z Dataheets PDF



Part Number P5NK60Z
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-Channel MOSFET
Datasheet P5NK60Z DatasheetP5NK60Z Datasheet (PDF)

N-CHANNEL 600V - 1.2Ω - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP5NK60Z STP5NK60ZFP STD5NK60Z s s s s s s STP5NK60Z - STP5NK60ZFP STD5NK60Z VDSS 600 V 600 V 600 V RDS(on) < 1.6 Ω < 1.6 Ω < 1.6 Ω ID 5A 5A 5A Pw 90 W 25 W 90 W 3 1 2 TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 1 DPAK DESCRIPTION The SuperMESH™ series.

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N-CHANNEL 600V - 1.2Ω - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP5NK60Z STP5NK60ZFP STD5NK60Z s s s s s s STP5NK60Z - STP5NK60ZFP STD5NK60Z VDSS 600 V 600 V 600 V RDS(on) < 1.6 Ω < 1.6 Ω < 1.6 Ω ID 5A 5A 5A Pw 90 W 25 W 90 W 3 1 2 TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 1 DPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING ORDERING INFORMATION SALES TYPE STP5NK60Z STP5NK60ZFP STD5NK60ZT4 MARKING P5NK60Z P5NK60ZFP D5NK60 PACKAGE TO-220 TO-220FP DPAK PACKAGING TUBE TUBE TAPE & REEL September 2002 1/12 Free Datasheet http://www.0PDF.com STP5NK60Z - STP5NK60ZFP ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP5NK60Z STD5NK60Z Value STP5NK60ZFP Unit VDS VDGR VGS ID ID IDM (l) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 5 3.16 20 90 0.72 600 600 ± 30 5 (*) 3.16 (*) 20 (*) 25 0.2 3000 4.5 2500 -55 to 150 -55 to 150 V V V A A A W W/°C V V/ns V °C °C (l) Pulse width limited by safe operating area (1) I SD ≤5A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 DPAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.39 62.5 300 TO-220FP 5 100 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 5 220 Unit A mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V (#) When mounted on minimum Footprint PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In.


A1659 P5NK60Z B1225


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