SIHG16N50C
SiHG16N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC...
Description
SiHG16N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 68 17.6 21.8 Single
D
FEATURES
Low Figure-of-Merit Ron x Qg
0.38
100 % Avalanche Tested Gate Charge Improved Trr/Qrr Improved Compliant to RoHS Directive 2002/95/EC
TO-247AC
G S D G S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free TO-247AC SiHG16N50C-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentc Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s EAS PD TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 500 ± 30 16 10 40 2 320 250 - 55 to + 150 300 °C W/°C mJ W A UNIT V
Notes a. Limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 16 A. c. Repetitive rating; pulse width limited by maximum junction temperature. d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91418 S10-1355-Rev. A, 14-Jun-10 www.vishay.com 1
Free Datasheet http://www.0PDF.com
SiHG16N50C
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. MAX. 40 0.5 U...
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