BARRIER DIODE. YG801C10R Datasheet

YG801C10R Datasheet PDF, Equivalent


Part Number

YG801C10R

Description

SCHOTTKY BARRIER DIODE

Manufacture

Fuji Electric

Total Page 3 Pages
PDF Download
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YG801C10R Datasheet
YG801C10R
SCHOTTKY BARRIER DIODE
(100V / 5A TO-22OF15)
Outline Drawings
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
1.2±0.2
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
JEDEC
EIAJ
SC-67
Connection Diagram
2
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1
3
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
VRRM
100 V
Repetitive peak surge reverse voltage
Isolating voltage
Average output current
Suege current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=117°C
Square wave
Sine wave 10ms
100
1500
5*
60
V
V
A
A
Operating junction temperature
Tj
+150
°C
Storage temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
-40 to +150
°C
* Out put current of centertap full wave connection.
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop **
VF IF=1.5A
0.8 V
Reverse current **
IR VR=VRRM
0.7 mA
Thermal resistance
Mechanical Characteristics
Rth(j-c)
Junction to case
2.5 °C/W
** Rating per element
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N·m
g
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YG801C10R Datasheet
(100V / 5A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
10
Tj=150 oC
Tj=125 oC
Tj=100 oC
1
Tj=25 oC
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF Forward Voltage (V)
Forward Power Dissipation
4.0
Io
3.5
λ
3.0 360°
2.5
Square wave λ=60 o
Square wave λ=120 o
2.0 Sine wave λ=180 o
Square wave λ=180 o
1.5 DC
1.0
0.5
Per 1element
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Io Average Forward Current (A)
Current Derating (Io-Tc)
160
150
140
130 DC
120
110
360°
100 λ
Io
90 VR=50V
Sine wave λ=180 o
Square wave λ=180 o
Square wave λ=120 o
Square wave λ=60 o
80
0
1234567
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
8
YG801C10R
Reverse Characteristic (typ.)
102
Tj=150 oC
101 Tj=125 oC
Tj=100 oC
100
10-1
Tj=25 oC
10-2
10-3
0
10 20 30 40 50 60 70 80 90 100 110
VR Reverse Voltage (V)
Reverse Power Dissipation
10
9 360°
8 VR
DC
7α
6
5
4 α=180 o
3
2
1
0
0 10 20 30 40 50 60 70 80 90 100 110
VR Reverse Voltage (V)
Junction Capacitance Characteristic (typ.)
1000
100
10
10
100
VR Reverse Voltage (V)
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Features Datasheet pdf YG801C10R SCHOTTKY BARRIER DIODE (100V / 5A TO-22OF15) Outline Drawings 10±0. 5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6. 3 2.7±0.2 3.7±0.2 1.2±0.2 13Min F eatures Low VF Super high speed switchi ng. High reliability by planer design. 15±0.3 0.7±0.2 2.54±0.2 0.6 +0.2 -0 2.7±0.2 JEDEC EIAJ SC-67 Appli cations High speed power switching. Co nnection Diagram 2 1 3 Maximum Ratings and Characteristics Absolute Maximum R atings Item Repetitive peak reverse vol tage Repetitive peak surge reverse volt age Isolating voltage Average output cu rrent Suege current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg tw=500ns , duty=1/40 Terminals to Case, AC. 1min . duty=1/2, Tc=117°C Square wave Sine wave 10ms Conditions Rating 100 100 15 00 5* 60 +150 -40 to +150 Unit V V V A A °C °C * Out put current of center tap full wave connection. Electrical Ch aracteristics (Ta=25°C Unless otherwis e specified ) Item Forward voltage drop ** Reverse current ** Thermal resistan.
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