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HS13003

Shantou Huashan

NPN SIlicon Transistor

N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HS13003 █ HIGH VOLTAGE SWITCH MODE ...


Shantou Huashan

HS13003

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N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HS13003 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) T stg —— Storage Temperature ………………………… -65~150 ℃ T j —— Junction Temperature ………………………………… 150 ℃ P C —— Collector Dissipation ………………………………… 30W VCBO——Collector-Base Voltage………………………………600V VCEO——Collector-Emitter Voltage……………………………400V V EB O —— Emitter-Base Voltage ……………………………… 9V I C —— Collector Current …………………………………… 1.5A 1―Base,B 2―Collector,C 3― Emitter,E █ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO HFE VCE(sat)1 VCE(sat)2 VBE(sat) ICBO IEBO fT tON tSTG tF 600 400 9 10 40 0.8 0.8 1.2 10 10 8 1.1 4.0 0.7 V V V V V V μA μA MHz μs μs μs IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCE=10V, IC=0.1A IC=1A, IB=500mA IC=0.5A, IB=100mA IC=0.5A, IB=100mA VCB=500V, IE=0 VEB=9V, IC=0 VCE=10V,IC=0.1A,f=1MHz DC Current Gain Collector- Emitter Saturation Voltage Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-off Current Emitter-Base Cut-off Current Current Gain-Bandwidth Product Turn On Time Storage Time Fall Time VCC=125V, IC=1A, IB1=0.2A,IB2=-0.2A RL=125Ω █ hFE Classification H1 10-16 H2 14-21 H3 19-26 H4 24-31 H5 29-40 Free Datasheet h...




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