95N03L Datasheet | FQB95N03L





95N03L PDF File (Datasheet) Download

Part Number 95N03L
Description FQB95N03L
Manufacture Fairchild Semiconductor
Total Page 11 Pages
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Features: FQB95N03L December 2002 FQB95N03L N-Ch annel Logic Level PWM Optimized Power M OSFET General Description This device e mploys a new advanced trench MOSFET tec hnology and features low gate charge wh ile maintaining low on-resistance. Opti mized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operatio n to higher switching frequencies. Fea tures • Fast switching • rDS(ON) = 0.0064Ω (Typ), V GS = 10V • rDS(ON) = 0.010Ω (Typ), VGS = 5V • Qg (Typ ) = 24nC, VGS = 5V • Qgd (Typ) = 8nC • CISS (Typ) = 2600pF Applications DC/DC converters DRAIN (FLANGE) D GATE SOURCE G TO-263AB MOSFET Maximu m Ratings TC = 25°C unless otherwise n oted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VG S = 10V) ID Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 1 0V, Rθ JA = 43oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature 75 48 15 S .

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December 2002
FQB95N03L
N-Channel Logic Level PWM Optimized Power MOSFET
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
Features
• Fast switching
• rDS(ON) = 0.0064(Typ), VGS = 10V
• rDS(ON) = 0.010(Typ), VGS = 5V
• Qg (Typ) = 24nC, VGS = 5V
• Qgd (Typ) = 8nC
• CISS (Typ) = 2600pF
DRAIN
(FLANGE)
D
GATE
SOURCE
G
TO-263AB
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
PD
TJ, TSTG
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
Package Marking and Ordering Information
Device Marking
FQB95N03L
Device
FQB95N03L
Package
TO-263AB
Reel Size
330mm
S
Ratings
30
±16
75
48
15
Figure 4
80
0.65
-55 to 150
1.5
62
43
Tape Width
24mm
Units
V
V
A
A
A
A
W
W/oC
oC
oC/W
oC/W
oC/W
Quantity
800 units
©2002 Fairchild Semiconductor Corporation
FQB95N03L Rev. B1
Free Datasheet http://www.0PDF.com

                    
           






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